GaAs/AlGaAs Nanowire Photodetector

Dai, Xiaoying; Zhang, Sen; Wang, Zilong; Adamo, Giorgio; Liu, Hai; Huang, Yizhong; Couteau, Christophe; Soci, Cesare

doi:10.1021/nl5006004

Cited by 238 publications

(213 citation statements)

References 37 publications

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“…The significant attention is due to the vast scope of technical applications [2][3][4][5][6] as well as the capability to conduct fundamental studies, such as the search for Majorana bound states [7,8]. Another broad field of interest concerns the utilization for spintronic devices, which exploit the spin degree of freedom of the charge carriers.…”

Section: Introductionmentioning

confidence: 99%

Magnetoconductance correction in zinc-blende semiconductor nanowires with spin-orbit coupling

et al. 2017

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We study the effects of spin-orbit coupling on the magnetoconductivity in diffusive cylindrical semiconductor nanowires. Following up on our former study on tubular semiconductor nanowires, we focus in this paper on nanowire systems where no surface accumulation layer is formed but instead the electron wave function extends over the entire cross section. We take into account the Dresselhaus spin-orbit coupling resulting from a zinc-blende lattice and the Rashba spin-orbit coupling, which is controlled by a lateral gate electrode. The spin relaxation rate due to Dresselhaus spin-orbit coupling is found to depend neither on the spin density component nor on the wire growth direction and is unaffected by the radial boundary. In contrast, the Rashba spin relaxation rate is strongly reduced for a wire radius that is smaller than the spin precession length. The derived model is fitted to the data of magnetoconductance measurements of a heavily doped back-gated InAs nanowire and transport parameters are extracted. At last, we compare our results to previous theoretical and experimental studies and discuss the occurring discrepancies.

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Section: Introductionmentioning

confidence: 99%

Magnetoconductance correction in zinc-blende semiconductor nanowires with spin-orbit coupling

et al. 2017

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“…Many materials and structures including quantum dots [90][91][92], nanotubes [93][94][95][96], and nanowires [97][98][99] have been studied and considered to be good alternatives for silicon-based photodetectors. Interestingly, most of the 2D semiconductors are sensitive to light, heat, and ambient which makes them very attractive for applications in optoelectronic device sensing from infrared to the ultraviolet regime.…”

Section: Photodectorsmentioning

confidence: 99%

Progress on Crystal Growth of Two-Dimensional Semiconductors for Optoelectronic Applications

Sun¹,

Xu²,

Zhang³

et al. 2018

Crystals

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Two-dimensional (2D) semiconductors are thought to belong to the most promising candidates for future nanoelectronic applications, due to their unique advantages and capability in continuing the downscaling of complementary metal-oxide-semiconductor (CMOS) devices while retaining decent mobility. Recently, optoelectronic devices based on novel synthetic 2D semiconductors have been reported, exhibiting comparable performance to the traditional solid-state devices. This review briefly describes the development of the growth of 2D crystals for applications in optoelectronics, including photodetectors, light-emitting diodes (LEDs), and solar cells. Such atomically thin materials with promising optoelectronic properties are very attractive for future advanced transparent optoelectronics as well as flexible and wearable/portable electronic devices.

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“…Krogstrup et al reported that a solar cell made from NWs can even break the Shockley-Queisser limit [62]. In addition, III-V NWs have been widely studied for use in detectors, single-photon sources and transistors [63][64][65].…”

Section: Low-dimensional Nanostructures Of Gasb Materialsmentioning

confidence: 99%

Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

et al. 2017

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Groups III-V semiconductors have received a great deal of attention because of their potential advantages for use in optoelectronic and electronic applications. Gallium antimonide (GaSb) and GaSb-related semiconductors, which exhibit high carrier mobility and a narrow band gap (0.725 eV at 300 K), have been recognized as suitable candidates for high-performance optoelectronics in the mid-infrared range. However, the performances of the resulting devices are strongly dependent on the structural and emission properties of the materials. Enhancement of the crystal quality, adjustment of the alloy components, and improvement of the emission properties have therefore become the focus of research efforts toward GaSb semiconductors. Molecular beam epitaxy (MBE) is suitable for the large-scale production of GaSb, especially for high crystal quality and beneficial optical properties. We review the recent progress in the epitaxy of GaSb materials, including films and nanostructures composed of GaSb-related alloys and compounds. The emission properties of these materials and their relationships to the alloy components and material structures are also discussed. Specific examples are included to provide insight on the common general physical and optical properties and parameters involved in the synergistic epitaxy processes. In addition, the further directions for the epitaxy of GaSb materials are forecasted.

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GaAs/AlGaAs Nanowire Photodetector

Cited by 238 publications

References 37 publications

Magnetoconductance correction in zinc-blende semiconductor nanowires with spin-orbit coupling

Magnetoconductance correction in zinc-blende semiconductor nanowires with spin-orbit coupling

Progress on Crystal Growth of Two-Dimensional Semiconductors for Optoelectronic Applications

Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

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