GaAs and AlGaAs reactive ion etching in SiCl4/Ar gas mixtures for HEMT applications

Abstract

This work presents the AlGaAs and GaAs etching results using a RIE reactor and SiCl 4 /Ar plasma. These materials can be applied in HEMT devices fabrication. The influence of the process temperature on etch rates has been studied. Selectivity of etching and the importance of the periodical process chamber cleaning for SiCl 4 containing gas mixtures are discussed. For optimized conditions, GaAs etch rate as high as ~50nm/min with low surface roughness, for process duration as long as 60 min, have been obtained.