GaAs and GaAlAs Devices for Integrated Optics .

Evtuhov, V.; Yariv, Amnon

doi:10.1109/tmtt.1975.1128504

Cited by 24 publications

(4 citation statements)

References 50 publications

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“…4.7, the cutoff condition (3.31) can be used in conjunction with (4.10) to calculate what Al concentration is required to produce waveguiding of a given mode. Figure 4.11 shows the results of such a calculation for + he case of waveguiding of the two lowest order modes of 0.9 μm wavelength light in Ga (1−x) Al x As waveguides of various thicknesses and Al concentrations [52]. Note the sharp increase in Al concentration difference (y − x) required for thickness/wavelength ratios less than about 0.8, particularly in the case of the m = 1 mode.…”

Section: Ga (1−x) Al X As Epitaxially Grown Waveguidesmentioning

confidence: 99%

“…4.14 Diagram of a basic electro-optic waveguide reasonable substrate carrier concentration of 10 16 cm −3 , application of V = 100 V, i.e., the maximum allowed if avalanche breakdown is to be avoided, would produce a depletion layer thickness t g = 3.6 μ m. This result is based on an abrupt junction calculation [76]. In that case, the resulting change in index, from (4.11), would be Δn = 8.3 ×10 −4 , where we have used n = 3.4 and n 3 r 41 = 6 × 10 −11 m/V for GaAs [52]. From (3.31), it can be seen that the lowest order mode would be guided in this case, but just barely.…”

Section: Electro-optic Waveguidesmentioning

confidence: 99%

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Waveguide Fabrication Techniques

Hunsperger

2009

Integrated Optics

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In Chapter 3, the theoretical considerations relevant to various types of waveguides were discussed. In every case, waveguiding depended on the difference in the index of refraction between the waveguiding region and the surrounding media. A great many techniques have been devised for producing that required index difference. Each method has particular advantages and disadvantages, and no single method can be said to be clearly superior. The choice of a specific technique of waveguide fabrication depends on the desired application, and on the facilities available. In this Chapter, various methods of waveguide fabrication are reviewed, and their inherent features are discussed.

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Section: Ga (1−x) Al X As Epitaxially Grown Waveguidesmentioning

confidence: 99%

Section: Electro-optic Waveguidesmentioning

confidence: 99%

Waveguide Fabrication Techniques

Hunsperger

2009

Integrated Optics

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“…In performing these calculations the dominant waveguide dispersion has been considered but not material dispersion [23], although this could be readily included in a similar manner. In the second set of calculations the effective refractive index profile used is recalculated at each wavelength and OCW excitation is used in the TD-BPM.…”

Section: Wavelength Sensitivity Of the MMI Structurementioning

confidence: 99%

Numerical techniques for multimode interference couplers

Sewell

Vuković

et al. 2005

Integrated Optics: Devices, Materials, and Technologies IX

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Multimode interference (MMI) devices have been developed for a large number of optoelectronic applications. Frequency domain methods have been widely used to simulate the behavior of this class of device at fixed operating wavelengths. However time domain models are becoming more popular in photonic simulation as bandwidths increase and account needs to be taken of material properties such as nonlinearity. By making physically consistent approximations, the time-domain beam propagation method provides simulation without incurring the large memory and computational penalties of other time domain numerical methods. In this paper we will compare these various approaches in the context of simulating MMI devices, provide guidelines for the selection of one approach in preference to the other and discuss the limitations and errors introduced by some of the common approximations made.

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“…5, while the upper curves will approach the free-carrier absorption loss in the waveguide given asg'. 9 From equations (5) and (6), this leads to…”

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Losses in Metal-Clad Ion-Implanted Ga As Optical Waveguides

Chung

Phung

1984

The Review of Laser Engineering

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We present an investigation of the optical interaction of metal cladding with guided waves in ion-implanted GaAs compound semiconductor waveguides under various implant conditions . At optical frequencies, such waveguides can be conveniently represented by a complex dielectric constant which depends on the carrier concentration in the implant region. The attenuation in these optical waveguides due to the free carrier absorption is compared with that due to propagation losses in metals .

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GaAs and GaAlAs Devices for Integrated Optics .

Cited by 24 publications

References 50 publications

Waveguide Fabrication Techniques

Waveguide Fabrication Techniques

Numerical techniques for multimode interference couplers

Losses in Metal-Clad Ion-Implanted Ga As Optical Waveguides

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