1989
DOI: 10.1143/jjap.28.l1439
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GaAs Atomic Layer Epitaxy Using the KrF Excimer Laser

Abstract: Complete self-limiting monolayer growth was achieved successfully in GaAs atomic layer epitaxy (ALE) using a KrF excimer laser. In thermal growth without laser irradiation, monolayer growth was achieved only for an extremely narrow temperature range around 500°C. With laser irradiation, monolayer growth was achieved for a relatively wide temperature range from 470°C to 530°C. The expanded temperature range for ALE under laser irradiation suggests an enhanced decomposition of Ga-containing adsorbates due to the… Show more

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Cited by 16 publications
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