GaAs based long-wavelength microring resonator optical switches utilising bias assisted carrier-injection induced refractive index change

Ravindran, Sooraj; Datta, Arnab; Alameh, Kamal; Lee, Yong Tak

doi:10.1364/oe.20.015610

Cited by 36 publications

(7 citation statements)

References 38 publications

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“…Materials exhibiting optical nonlinearities are important elements for applications in optical data storage, optical switches, , semiconductor optical amplifiers, and lasers . Currently, optical signal switching in optical communications is accomplished through optical-to-electronic-to-optical (OEO) conversion components.…”

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confidence: 99%

Third-Order Optical Nonlinearities in Organometallic Methylammonium Lead Iodide Perovskite Thin Films

et al. 2016

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With solar conversion efficiencies surpassing 20%, organometallic perovskites show tremendous promise for solar cell technology. Their high brightness has also led to demonstrations of lasing and power-efficient electroluminescence. Here we show that thin films of methylammonium lead iodide, prepared by solution processing at temperatures not exceeding 100 °C, exhibit a highly nonlinear intensity-dependent refractive index due to changes in the free-carrier concentration and for femtosecond excitation at higher intensities undergo saturation that can be attributed to the Pauli blocking effect. Nonlinear refractive index and nonlinear absorption coefficients were obtained by the Z-scan technique, performed simultaneously in open- and closed-aperture configurations. Both nanosecond- and femtosecond-pulsed lasers at multiple wavelengths were used in order to distinguish between the mechanisms inducing the nonlinearities. The magnitude and sign of the nonlinear refractive index n 2 were determined. For resonant excitation, free carrier generation is the dominant contribution to the nonlinear refractive index, with a large nonlinear refractive index of n 2 = 69 × 10–12 cm2/W being observed for resonant femtosecond pumping and n 2 = 34.4 × 10–9 cm2/W for resonant nanosecond pumping. For nonresonant femtosecond excitation, bound-charge-induced nonlinearity leads to n 2 = 36 × 10–12 cm2/W. These values are equivalent to the best reported metrics for conventional semiconductors, suggesting that organometallic perovskites are promising materials for optical switching and bistability applications.

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Third-Order Optical Nonlinearities in Organometallic Methylammonium Lead Iodide Perovskite Thin Films

et al. 2016

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“…In addition, we want to note that for many semiconductor heterostructures used in modern optoelectronics, a dependence of the refractive index or dielectric function on spatial distance is observed [79]. In particular, the refractive indices of semiconductor photonic crystals GaAs/GaAlAs [80,81], InGaAs/InAlAs [82], InGaAsP/ InP [83] are described by spatial graded-index profiles. Therefore, they can be classified as optically gradient media.…”

Section: Discussionmentioning

confidence: 99%

Nonlinear localized states near the interface with nonlinear response between the medium with a parabolic index spatial profile and Kerr-type medium

Savotchenko

2024

Phys. Scr.

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The interface with nonlinear response separating the parabolic graded-index and the Kerr nonlinear media are considered. Exact solutions to the nonlinear Schrödinger equation with nonlinear short-range potential and a parabolic spatial profile are found applying to the theoretical description of the stationary states localized near interface with nonlinear properties. Localized states with continuous/discrete energy spectrum are described by the Whittaker function / Hermite polynomials in the medium with a parabolic profile of characteristic and the hyperbolic cosine (sine) in the medium with a self-focusing/defocusing Kerr nonlinearity. The field localization length is wider in the case of a self-focusing nonlinearity than in the case of a defocusing one. The maximum of the wave function is located in a nonlinear medium in the case of a self-focusing nonlinearity and at the interface in the case of a defocusing one. It is shown the possibility of a motion closer to the interface (or away from it) the maximum intensity of the localized state by changing the values of the interface response parameters at the fixed localization energy. A growth of the width of the parabolic graded-index layer adduced an increase in the maximum height of localized states of discrete spectrum and theirs localization length in the graded-index layer, but it had almost no effect on the profile of localized states of the continuous spectrum.

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“…We note that many semiconductor heterostructures in advanced optoelectronics are characterized by the refractive index depending on spatial distance (graded-index media) [30]. In particular, the refractive index of semiconductor photonic crystals GaAs/GaAlAs [71,72], InGaAs/InAlAs [73], InGaAsP/InP [74] are described by the graded-index profiles. The parabolic profile may be used when it gives the best fit with experimental data compared to other types of profiles.…”

Section: Discussionmentioning

confidence: 99%

Surface waves propagating along the interface between a parabolic graded-index medium and a self-focusing nonlinear medium: exact analytical solution

Савотченко

2022

J. Opt.

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The waveguide properties of interface between a parabolic graded-index medium and a self-focusing nonlinear medium are described theoretically. The exact analytical solution to the wave equation with dielectric permittivity dependent on the distance from interface and on the electric field intensity is found. The obtained solution describes the new type of nonlinear surface wave. It is shown that the electric field is localized completely inside the parabolic graded-index layer. The dispersion equation determining explicit dependence of the effective refractive index on the thickness of the parabolic graded-index layer and the change in dielectric constant in it is found in a particular case corresponding to the exotic surface wave propagation. The influence of the optical parameters on the distribution profile of the electric field across is analyzed. The decrease in the field in surface waves with distance from the interface is non-exponential.

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GaAs based long-wavelength microring resonator optical switches utilising bias assisted carrier-injection induced refractive index change

Cited by 36 publications

References 38 publications

Third-Order Optical Nonlinearities in Organometallic Methylammonium Lead Iodide Perovskite Thin Films

Third-Order Optical Nonlinearities in Organometallic Methylammonium Lead Iodide Perovskite Thin Films

Nonlinear localized states near the interface with nonlinear response between the medium with a parabolic index spatial profile and Kerr-type medium

Surface waves propagating along the interface between a parabolic graded-index medium and a self-focusing nonlinear medium: exact analytical solution

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