GaAs-based resonant tunneling diode: Device aspects from design, manufacturing, characterization and applications

Samanta, Swagata

doi:10.1088/1674-4926/44/10/103101

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Cited by 4 publications

References 73 publications

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Theoretical Exploration of Dehydrogenation Processes for Ni- and Niau-Plated Al-Based Silicon Carbide

Dong,

Song,

Cui

et al. 2024

Preprint

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Theoretical Exploration of Dehydrogenation Processes for Ni- and Niau-Plated Al-Based Silicon Carbide

Dong,

Song,

Cui

et al. 2024

Preprint

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Wet Chemical Synthesis of AlxGa1−xAs Nanostructures: Investigation of Properties and Growth Mechanisms

Suchikova,

Kovachov,

Bohdanov

et al. 2024

Crystals

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This study focuses on the wet chemical synthesis of AlxGa1−xAs nanostructures, highlighting how different deposition conditions affect the film morphology and material properties. Electrochemical etching was used to texture GaAs substrates, enhancing mechanical adhesion and chemical bonding. Various deposition regimes, including voltage switching, gradual voltage increase, and pulsed voltage, were applied to explore their impact on the film growth mechanisms. SEM analysis revealed distinct morphologies, EDX confirmed variations in aluminum content, Raman spectroscopy detected structural disorders, and XRD analysis demonstrated peak position shifts. The findings emphasize the versatility and cost-effectiveness of wet electrochemical methods for fabricating high-quality AlxGa1−xAs films with tailored properties, showing potential for optoelectronic devices, high-efficiency solar cells, and other advanced semiconductor applications.

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Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel

Vetrova,

Kuimov,

Sinyakin

et al. 2023

Sensors

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This paper presents an effective compact model of current transfer for the estimation of hysteresis parameters on the volt-ampere characteristics of resonant-tunneling diodes. In the framework of the compact model, the appearance of hysteresis is explained as a manifestation of internal bistability due to interelectronic interaction in the channel of the resonant-tunneling structure. Unlike the models based on the method of equivalent circuits, the interelectronic interaction in the compact model is taken into account using the concentration parameter. Model validation allowed us to confirm the high accuracy of the model not only at the initial section of the volt-ampere characteristics, but also at the hysteresis parameters traditionally predicted with low accuracy, namely the loop width (∆ < 0.5%) and contrast (∆ < 7%). Thus, it is concluded that the models are promising for integration into systems for synthesizing the electrical characteristics of resonant-tunneling diodes.

show abstract

GaAs-based resonant tunneling diode: Device aspects from design, manufacturing, characterization and applications

Cited by 4 publications

References 73 publications

Theoretical Exploration of Dehydrogenation Processes for Ni- and Niau-Plated Al-Based Silicon Carbide

Theoretical Exploration of Dehydrogenation Processes for Ni- and Niau-Plated Al-Based Silicon Carbide

Wet Chemical Synthesis of AlxGa1−xAs Nanostructures: Investigation of Properties and Growth Mechanisms

Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel

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