GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures

Chen, Siming; Li, Wei; Zhang, Ziyang; Childs, David; Zhou, Kang; Orchard, Jonathan R.; Kennedy, K.; Hugues, Maxime; Clarke, Edmund M.; Ross, I. M.; Wada, Osamu; Hogg, R. A.

doi:10.1186/s11671-015-1049-2

Cited by 23 publications

(12 citation statements)

References 38 publications

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“…However, we note that this may be overoptimistic of the achievable resolution as any additional spectral components of the emission spectrum beyond a single Gaussian will result in power to large positive and negative delays within the coherence function. This may result in ghost images or a resolution penalty due to spectral modulation [46]. At low current densities, the axial resolution is almost identical whether the absorber is O/C or S/C (i.e., in the limit of zero photo-voltage applied to the absorber), with an HWHM of ∼ 2.74 μm.…”

Section: Broadband Gan Sledmentioning

confidence: 99%

Gallium Nitride Superluminescent Light Emitting Diodes for Optical Coherence Tomography Applications

Goldberg

Boldin

Andersson

et al. 2017

IEEE J. Select. Topics Quantum Electron.

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Abstract-Optical coherence tomography (OCT) exploits the coherent properties of light to permit noninvasive and in situ imaging of biological tissues. By expanding the range of OCT light sources from the traditional telecoms wavelengths to include ∼400 nm gallium nitride (GaN) based superluminescent light emitting diodes (SLEDs) subcellular axial and lateral resolution could be achieved, provided enhanced bandwidth is also achieved. Due to the focus on high-power applications for GaN SLEDs, there has been limited work on increasing the source bandwidth. In this paper, we demonstrate for the first time a ∼400 nm GaN SLED with >10 nm bandwidth employed within an OCT system, where an axial resolution of ∼7 µm is achieved. Bespoke GaN SLEDs suggest that <4 µm axial resolution imaging is imminent for short wavelength devices.Index Terms-Axial resolution, broad bandwidth, gallium nitride superluminescent light emitting diodes, optical coherence tomography.

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Section: Broadband Gan Sledmentioning

confidence: 99%

Gallium Nitride Superluminescent Light Emitting Diodes for Optical Coherence Tomography Applications

Goldberg

Boldin

Andersson

et al. 2017

IEEE J. Select. Topics Quantum Electron.

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“…It is well-known that SAQDs constructed by the Stranski-Krastanov (S-K) epitaxy growth mode have been studied extensively for making high-performance lasers over the past three decades [10][11][12][13][14]. As carriers in the QDs structures are strongly confined in all three-dimensional space, the thermal distribution in the QD structure is much smaller than that in bulk and QW structures, which allows one to obtain a low threshold current, high wavelength stability under direct modulation, and high temperature insensitivity for a QD laser [15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Broadband Quantum Dot Superluminescent Diode with Simultaneous Three-State Emission

Jiang

Wang

Chen³

et al. 2022

Nanomaterials

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Semiconductor superluminescent light-emitting diodes (SLEDs) have emerged as ideal and vital broadband light sources with extensive applications, such as optical fiber-based sensors, biomedical sensing/imaging, wavelength-division multiplexing system testing and optoelectronic systems, etc. Self-assembled quantum dots (SAQDs) are very promising candidates for the realization of broadband SLED due to their intrinsic large inhomogeneous spectral broadening. Introducing excited states (ESs) emission could further increase the spectral bandwidth. However, almost all QD-based SLEDs are limited to the ground state (GS) or GS and first excited state (ES1) emission. In this work, multiple five-QD-layer structures with large dot size inhomogeneous distribution were grown by optimizing the molecular beam epitaxy (MBE) growth conditions. Based on that, with the assistance of a carefully designed mirror-coating process to accurately control the cavity mirror loss of GS and ESs, respectively, a broadband QD-SLED with three simultaneous states of GS, ES1 and second excited-state (ES2) emission has been realized, exhibiting a large spectral width of 91 nm with a small spectral dip of 1.3 dB and a high continuous wave (CW) output power of 40 mW. These results pave the way for a new fabrication technique for high-performance QD-based low-coherent light sources.

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“…In contrast, self-assembled InAs quantum dots (QDs) 5) are ideal broadband optical gain materials. As an ensemble of InAs QDs has an inherent size and In composition distributions, a broadband emission and gain spectra in the NIR regions, typically in the 1.2-1.3-μm range, can be easily obtained [6][7][8][9][10][11][12] . Many studies have demonstrated the development of broadband tunable lasers based on self-assembled InAs QDs [13][14][15][16][17][18][19][20][21][22] .…”

Section: Introductionmentioning

confidence: 99%

1.1 μm waveband tunable laser using emission-wavelength-controlled InAs quantum dots for swept-source optical coherence tomography applications

Tsuji

Ozaki

Yamauchi

et al. 2021

Jpn. J. Appl. Phys.

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In this study, an optical gain chip using emission-wavelength-controlled self-assembled InAs quantum dots (QDs) was developed for swept-source optical coherence tomography (SS-OCT) applications. The optical characterizations indicated that the QDs emission wavelength and optical gain spectra were controlled in the 1.1μm waveband by optimizing the QDs growth conditions. This waveband is useful for obtaining a large imaging depth of OCT because of an optimal balance between absorption and scattering in biological samples. In addition, continuous tunable lasing in the waveband was achieved by introducing the QD-based gain chip into a grating-coupled external cavity. This tunable laser was introduced into an SS-OCT setup, and the point spread function (PSF) was evaluated. The PSF position was observed to vary according to the optical path length differences. These results demonstrate the feasibility of the application of emission-wavelength-controlled QDs for SS-OCT.

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GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures

Cited by 23 publications

References 38 publications

Gallium Nitride Superluminescent Light Emitting Diodes for Optical Coherence Tomography Applications

Gallium Nitride Superluminescent Light Emitting Diodes for Optical Coherence Tomography Applications

Broadband Quantum Dot Superluminescent Diode with Simultaneous Three-State Emission

1.1 μm waveband tunable laser using emission-wavelength-controlled InAs quantum dots for swept-source optical coherence tomography applications

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