GaAs/c‐GaN/GaAs multi‐layered structure fabricated by using RF‐plasma source nitridation technique

Abstract

Ultra thin nitrided layers on GaAs surfaces and GaAs/c-GaN/ GaAs multi-layer, where c-GaN thin layer plays a role as both insulating mask and intermediate layer of growth, were fabricated by using RF-MBE. An effect of dislocation reduction with regard to the nitridation condition of c-GaN intermediate layer was studied using cross sectional TEM observation.

Influence of substrate temperature on nitridation of (001) GaAs using RF-radical source

“…Though a large lattice mismatch exists between GaN and GaAs, a highquality ultra-thin GaN layer can be reproducibly fabricated by the technique [10,11]. The layer is available not only for protecting but also passivating the GaAs surface.…”

X-ray Photoemission Spectroscopy Study of Low-Temperature Nitridation of GaAs(001) Surface Using RF Radical Source

“…Nitridation of the GaAs surface is known as a very promising technique for fabricating nanometer-thick c-GaN layers. [6][7][8][9] High-quality GaN layers can be reproducibly fabricated by nitridation, 10,11) although a large lattice mismatch exists between GaN and GaAs. The layer is available not only for protection, but also passivation of the GaAs surface.…”

X-ray Photoemission Spectroscopy Study of GaAs(111)B Substrate Nitridation using an RF-Radical Source

“…[1][2][3][4] Although a large lattice mismatch exists between GaN and GaAs, a high-quality ultrathin GaN layer can be reproducibly fabricated by the technique. 5,6) The layer both protects and passivates the GaAs surface. There have been few reported studies of the GaAs(111)B surface, but there have been many reports on the nitridation of GaAs(001) surfaces.…”