GaAs delta-doped layers in Si for evaluation of SIMS depth resolution GaAs

Abstract

Due to the complicated artefacts in SIMS depth profiling, SIMS depth resolution is difficult to evaluate. For evaluation of the SIMS depth resolution, delta-doped layers are more useful than sharp interfaces, because the matrix effect and the sputtering rate change can be minimized in profiling through delta layers. The GaAs delta-doped layers in Si were grown and proposed as a reference material for the evaluation of SIMS depth resolution. The SIMS depth resolution was estimated using the analytical expression based on a double exponential with a Gaussian, and its dependence on SIMS analysis conditions such as ion energy, ion species and incidence angle was studied with the proposed GaAs delta-doped multilayers in Si.

A new method for the calibration of the vertical scale of a stylus profilometer using multiple delta-layer films

“…The lattice distance between the Si (1 1 1) planes observed in the cross-sectional TEM image is 0.313 55 nm. 4 The certification was performed by a two-step calibration because the film is too thick to measure the total thickness using the lattice constant of the Si (1 0 0) substrate.…”

“…The first term (U m ) is the standard 4 International Centre for Diffraction Data, PDF#27-1402. The Si (1 1 1) lattice plane spacing is equal to the lattice parameter divided by √ 3. uncertainty from the thickness measurement in a TEM image.…”

“…Mechanical measurement by a stylus profilometer or an optical interferometer is recommended as a calibration method of the depth scale. Delta-layers in multiple delta-layer (MDL) films can be used as marker layers for the calibration of the depth scale and evaluation of depth resolution [4,5]. A GaAs-doped Si multiple delta-layer where Si films are separated by GaAs-doped Si delta-layers were developed as multiple delta-layer CRMs [6].…”