GaAs diodes for TiT2-based betavoltaic cells

Дорохин, М. В.; Vikhrova, O. V.; Demina, P. B.; Kalentyeva, I. L.; Вергелес, П. С.; Yakimov, E. B.; Lesnikov, V. P.; Звонков, Б. Н.; Ved, M. V.; Danilov, Yu. A.; Zdoroveyshchev, A. V.

doi:10.1016/j.apradiso.2021.110030

Cited by 9 publications

(9 citation statements)

References 19 publications

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“…To study the performance of different semiconductor structures, Dorokhin et al fabricated GaAs betavoltaic batteries using a Schottky diode, p−n junction, and Schottky diode with a carbon film (Figure 8). 72 An e-beam was used to simulate the effect of a radioisotope, while the characteristics of these structures were studied through the Monte Carlo method. The Schottky diode with the deposited carbon layer had the highest J sc and V oc of 170 nA cm −2 and 180 mV, respectively.…”

Section: Gallium Nitride/gallium Arsenide-based Betavoltaic Batteriesmentioning

confidence: 99%

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Betavoltaic Nuclear Battery: A Review of Recent Progress and Challenges as an Alternative Energy Source

et al. 2023

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Nuclear energy is considered a suitable and eco-friendly alternative for combating the rising greenhouse gases in the atmosphere from excessive fossil fuel consumption. Betavoltaic battery is a form of nuclear technology that utilizes the decay energy of β-emitting radioisotopes to produce electrical power. Owing to its long shelf life, high specific energy density, and ability to work under extreme conditions, it has been a subject of considerable research attention in the past few years. Despite significant research on betavoltaic battery, several impediments to realizing high energy conversion efficiency and maximum power density have yet to be overcome. This Review Article comprehensively discusses the challenges and recent research progress of betavoltaic battery development. First, promising strategies for improving betavoltaic battery performance, theoretical principles, and equations for quantifying betavoltaic battery efficiency are discussed. Then a thorough overview of several β-radiation absorbing materials, such as traditional semiconductors, metal oxides, and organic/inorganic materials, is explored. Finally, the outlook for betavoltaic battery is discussed before concluding the review.

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Section: Gallium Nitride/gallium Arsenide-based Betavoltaic Batteriesmentioning

confidence: 99%

“…Schematic representation of three types of fabricated mesa-structures of diodes: (a) p–n junction diode, (b) Schottky diode, (c) Schottky diode with a carbon film fabricated on the surface of the structure by pulsed laser deposition in a vacuum. Reproduced with permission from ref . Copyright 2022, Elsevier.…”

Section: Materials For the Betavoltaic Batteriesmentioning

confidence: 99%

Betavoltaic Nuclear Battery: A Review of Recent Progress and Challenges as an Alternative Energy Source

et al. 2023

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“…Compared with the tradition Si semiconductor, GaAs has the wider band gap (1.424 eV), higher electron mobility (∼8000 cm 2 (V•s) −1 ), lower intrinsic carrier concentration (1.8 × 10 6 cm −3 ) and higher threshold energy for radiation damage (270 keV) [9]. The GaAs-based betavoltaic batteries are expected to have satisfactory performance, and have also been reported [10][11][12][13][14][15][16][17][18]. In 2012, a GaAs betavoltaic battery based on P + PINN + structure was proposed [14].…”

Section: Introductionmentioning

confidence: 99%

“…In 2022, a GaAs-based battery with Schottky structure modified by deposition of a carbon layer was investigated. Their experiments and simulations showed that the carbon deposition at the top of n-GaAs layer can passivate the surface state of GaAs, and further improve the battery performance [18].…”

Section: Introductionmentioning

confidence: 99%

Enhanced performance of GaAs-based betavoltaic batteries by using AlGaAs hole/electron transport layers

Zheng¹,

Lu²,

Wang³

et al. 2022

J. Phys. D: Appl. Phys.

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The GaAs-based betavoltaic batteries with 63Ni source were demonstrated, in which the AlGaAs hole/electron transport layers were introduced to enhance the transport and collection of radiation-induced carriers. The Monte Carlo codes and COMSOL Multiphysics were combined to predict the output performance of batteries and optimize the structure parameters of energy converter. And the optimized GaAs-based battery with a 6 mCi/cm2 63Ni source was expected to achieve a short-circuit current density (Jsc) of 85.6 nA/cm2, an open-circuit voltage (Voc) of 0.67 V and a maximum output power density (Pm) of 43.3 nW/cm2. Then the GaAs/AlGaAs films were grown by Metal Organic Chemical Vapor Deposition (MOCVD), and the comb-like electrodes were designed to reduce the absorption loss of beta particles in the p-plane electrode. The Photoluminescence (PL) and X-Ray Diffraction (XRD) were carried out to characterize the growth quality of epitaxial materials. The experimental results showed that the largest Jsc of 9.3 nA/cm2, Voc of 55 mV and Pm of 143.9 pW/cm2 can be achieved on the 2-busbar electrode battery. And the temperature dependence tests showed that when the temperature decreased to 233.15 K, the Voc and Pm increased to 208 mV and 570.5 pW/cm2, respectively. Further improvements in fabrication process are needed to reduce the gap between experiment and prediction. In addition, the optimized structure of energy converter suggests the directions for enhancing the performance of betavoltaic batteries.

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“…Thus, this structure is extensively studied both experimentally and theoretically [3]. GaAs and AlGaAs are important semiconductors for developing several applications of Schottky diodes including high speed devices [4], high electron mobility transistors (HEMTs) [5], solar cells [6], betavoltaic cells [7] and particle detectors [8]. Schottky barriers are usually realised by depositing a layer of a metal on a semiconductor without considering lattice mismatching amongst other conditions [9].…”

mentioning

confidence: 99%

Schottky contact diameter effect on the electrical properties and interface states of Ti/Au/p-AlGaAs/GaAs/Au/Ni/Au Be-doped p-type MBE Schottky diodes

Lakhdari¹,

Sengouga²,

Labed³

et al. 2022

Semicond. Sci. Technol.

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Schottky diodes based on Be-doped p-type AlGaAs were grown by molecular beam epitaxy (MBE) and their current-voltage (I-V) and capacitance-voltage (C-V) characteristics measured. The Schottky and Ohmic contacts are Ti/Au and Au/Ni/Au, respectively. The effect of the Schottky contact diameter on I-V and C-V characteristics was studied. To elucidate this effect, the Schottky diode figures of merits and interface states are extracted from I-V and C-V characteristics, respectively. It was found that interface states density increases with increasing Schottky contact diameter then saturates beyond 400 µm. The frequency dependence of the C-V characteristics was also related to these interface states. The results of this present study can help choosing the right Schottky contact dimensions.

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GaAs diodes for TiT2-based betavoltaic cells

Cited by 9 publications

References 19 publications

Betavoltaic Nuclear Battery: A Review of Recent Progress and Challenges as an Alternative Energy Source

Betavoltaic Nuclear Battery: A Review of Recent Progress and Challenges as an Alternative Energy Source

Enhanced performance of GaAs-based betavoltaic batteries by using AlGaAs hole/electron transport layers

Schottky contact diameter effect on the electrical properties and interface states of Ti/Au/p-AlGaAs/GaAs/Au/Ni/Au Be-doped p-type MBE Schottky diodes

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