1992
DOI: 10.1049/el:19920232
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GaAs flipchip pin diode for millimetre-wave application

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Cited by 2 publications
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“…However, in the millimeter-wave band, it is difficult to acquire the circuit margin; especially, it is undesirable to increase the number of RF ports in the millimeter-wave band due to high production costs. On the other hand, although there is a means to attenuate the electric power in the unselected sectors using resistive material in the switches [7][8], the amount of power that could be supplied to the selected sector would reach only 1/(number of sectors) of the input power. Therefore, by using an ideal ON (penetration)/OFF (reflection) switch, the radial fed-circuit structure is designed to experience minimal loss.…”
Section: Radial Fed-circuit Structurementioning
confidence: 99%
“…However, in the millimeter-wave band, it is difficult to acquire the circuit margin; especially, it is undesirable to increase the number of RF ports in the millimeter-wave band due to high production costs. On the other hand, although there is a means to attenuate the electric power in the unselected sectors using resistive material in the switches [7][8], the amount of power that could be supplied to the selected sector would reach only 1/(number of sectors) of the input power. Therefore, by using an ideal ON (penetration)/OFF (reflection) switch, the radial fed-circuit structure is designed to experience minimal loss.…”
Section: Radial Fed-circuit Structurementioning
confidence: 99%