GaAs-GaAsP Heterostructure Injection Lasers

Abstract

not Available.

Time delay in InGaN multiple quantum well laser diodes at room temperature

“…[7] The long delay effect and the transition temperature were also observed in single-heterostructure lasers of Ga 1−x Al x As [8] and GaAs 1−x P x . [9] The transition temperature was found to be dependent on the width of the active region and fabrication procedures.…”

Developments in Luminescence and Display Materials Over the Last 100 Years as Reflected in Electrochemical Society Publications

“…Craford et al 115 described the GaAs-GaAsP heterostructure injection lasers and compared their results to the previously known GaAs-GaAlAs lasers. Hopkins et al 116 122 described the vapor growth of In 1Ϫx Ga x P for P-N junction electroluminescence.…”

“…In 1971, further work on laser materials was reported in the Journal. Craford et al 115 described the GaAs-GaAsP heterostructure injection lasers and compared their results to the previously known GaAs-GaAlAs lasers. Hopkins et al 116 communicated on silicate oxyapatites, high-energy hosts for Nd 3ϩ of the form MeLn 4 (SiO 4 ) 3 O where Me is a divalent alkaline earth ion and Ln is a trivalent rare earth ion.…”