GaAs/Indium Tin Oxide/Si Bonding Junctions for III-V-on-Si Hybrid Multijunction Cells With Low Series Resistance

Shigekawa, Naoteru; Hara, T.; Ogawa, Takasuke; Liang, Jianbo; Kamioka, Takefumi; Araki, Kiyomichi; Yamaguchi, Masafumi

doi:10.1109/jphotov.2018.2802203

Cited by 21 publications

(26 citation statements)

References 49 publications

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“…Regarding the methods to construct III–V-on-Si architectures, a variety of studies have been reported. One of the most straightforward approaches would be the heteroepitaxial growth of GaAs-relevant materials on c-Si substrates; , however, despite the progress of elaborative buffer layer techniques to compensate for the difference in lattice constants and thermal expansion coefficients between GaAs and Si, the layer quality achieved with this type of approach remains a challenge. ,− Alternatively, bonding-based approaches have gained increasing attention, − and as previously mentioned, impressive results have already been obtained by mechanically stacked four-terminal tandems and surface-activation-bonded two-terminal tandems. , We have also developed a unique semiconductor bonding strategy, termed smart stack. − Using well-organized Pd nanoparticle (NP) arrays as bonding mediators, series-connected two-terminal tandem cells consisting of III–V and c-Si subcells have been successfully fabricated with the best efficiency of 30.8% . To make the smart stack technique more attractive, however, it would be preferable to find alternative materials for costly Pd, whose price has recently been rising due to the increasing demand of many other industrial applications…”

Section: Introductionmentioning

confidence: 99%

Cu Nanoparticle Array-Mediated III–V/Si Integration: Application in Series-Connected Tandem Solar Cells

Mizuno

Makita

Mochizuki

et al. 2020

ACS Appl. Energy Mater.

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The integration of III−V materials with crystalline Si (c-Si) is a promising pathway to design high-performance optoelectronic devices, including solar cells. We have previously reported high-efficiency III−V/Si tandem cells using our unique semiconductor bonding technique, termed smart stack. In the conventional smart stack cells, Pd nanoparticle (NP) arrays have been commonly employed as bonding mediators between III−V and c-Si; however, from an economical point of view, the use of other low-cost metals would be preferable. Therefore, this study focused on the possibility of Cu. A polystyrene-block-poly-2-vinylpyridine (PS-b-P2VP)-based block copolymer was utilized to prepare Cu NP arrays. Desired Cu NP arrays were achieved by starting with self-assembled PS-b-P2VP micelles preloaded with Cu 2+ ions. Satisfying bonding properties (low-resistance interfaces) were confirmed when GaAs subcells were stacked on the Cu NP arrays formed on native-oxide-removed c-Si subcells. Conversion efficiencies of up to 25.9% have been demonstrated with triple-junction structures consisting of InGaP/GaAs top and c-Si bottom subcells. The long-term reliability of Cu NP array-mediated smart stack cells was also verified by the thermal cycle and damp heat tests. Hence, we have successfully confirmed that not only Pd but also Cu is available to realize high-efficiency smart stack cells.

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Section: Introductionmentioning

confidence: 99%

Cu Nanoparticle Array-Mediated III–V/Si Integration: Application in Series-Connected Tandem Solar Cells

Mizuno

Makita

Mochizuki

et al. 2020

ACS Appl. Energy Mater.

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“…In this study, for the purpose of simplicity, we used Si wafers as representative semiconductor materials. However, the proposed method can be easily extended to other semiconductors, given that numerous wafer-bonding experimental demonstrations between dissimilar materials are reported to date [4,[26][27][28][29][30][31].…”

Section: Methodsmentioning

confidence: 99%

“…C 2020, 6, 28 2 of 10 Thus, semiconductor bonding is a promising technique for realizing high-performance semiconductor optoelectronics. Hence, it is employed in the fabrication of a variety of devices, such as light-emitting diodes [24,25], lasers [4,26,27], photodetectors [28,29], and solar cells [27,30,31]. In the present study, we fabricate a Si/GQD/Si double heterostructure via semiconductor wafer bonding, towards the realization of high-efficiency nano-optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Graphene-Quantum-Dot-Mediated Semiconductor Bonding: A Route to Optoelectronic Double Heterostructures and Wavelength-Converting Interfaces

Nishigaya

Kishibe

Tanabe

2020

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A semiconductor bonding technique that is mediated by graphene quantum dots is proposed and demonstrated. The mechanical stability, electrical conductivity, and optical activity in the bonded interfaces are experimentally verified. First, the bonding scheme can be used for the formation of double heterostructures with a core material of graphene quantum dots. The Si/graphene quantum dots/Si double heterostructures fabricated in this study can constitute a new basis for next-generation nanophotonic devices with high photon and carrier confinements, earth abundance, environmental friendliness, and excellent optical and electrical controllability via silicon clads. Second, the bonding mediated by the graphene quantum dots can be used as an optical-wavelength-converting semiconductor interface, as experimentally demonstrated in this study. The proposed fabrication method simultaneously realizes bond formation and interfacial function generation and, thereby, can lead to efficient device production. Our bonding scheme might improve the performance of optoelectronic devices, for example, by allowing spectral light incidence suitable for each photovoltaic material in multijunction solar cells and by delivering preferred frequencies to the optical transceiver components in photonic integrated circuits.

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“…Argon atoms are used to remove the oxide from the surfaces and high force is used to bring the wafer in contact. [ 155 ] In the end, H 2 O 2 and NH 4 OH solutions are used to get high quality and strong bonding. [ 146 ] The SAB fabrication procedure of GaInP/GaAs/Si tandem SC is schematically shown in Figure 6b.…”

Section: Iii–vmentioning

confidence: 99%

Brief Outlook on Top Cell Absorber of Silicon‐Based Tandem Solar Cells

et al. 2023

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Silicon (Si) is a low‐cost, stable photovoltaic market contributor which is approaching its single‐junction theoretical efficiency limit. To further elevate the efficiency of crystalline Si (c‐Si) afterward, Si solar cells (SCs) need a proper top cell absorber in Si tandem SCs. Herein, the top cell absorber is studied by evaluating their current state of the art, the existing challenges, and possible future solutions which can enhance their efficiency. The progress of perovskite/Si tandem SC both for monolithic and four terminals is exceptional but still many challenges limit their commercialization. In view of these challenges, the relative's solutions are prescribed in detail to make possible their realization. III–V semiconductors being mature candidates still face a growth/fabrication problem, which makes them a costly option for III–V/Si tandem SCs. Effective growth strategies along with technical solutions are discussed in detail. Emerging chalcogenides are considered the future of tandem technology. Recent developments in the chalcogenides/Si tandem SC are highlighted and the possible options are presented. In the end, a short note is given on the near future tandem materials for Si tandem SCs.

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GaAs/Indium Tin Oxide/Si Bonding Junctions for III-V-on-Si Hybrid Multijunction Cells With Low Series Resistance

Cited by 21 publications

References 49 publications

Cu Nanoparticle Array-Mediated III–V/Si Integration: Application in Series-Connected Tandem Solar Cells

Cu Nanoparticle Array-Mediated III–V/Si Integration: Application in Series-Connected Tandem Solar Cells

Graphene-Quantum-Dot-Mediated Semiconductor Bonding: A Route to Optoelectronic Double Heterostructures and Wavelength-Converting Interfaces

Brief Outlook on Top Cell Absorber of Silicon‐Based Tandem Solar Cells

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