GaAs integrated Hall sensor with temperature-stabilised characteristics up to 300°C

Highly Sensitive Nanotesla Quantum-Well Hall-Effect Integrated Circuit Using GaAs–InGaAs–AlGaAs 2DEG

“…Due to the inherently poor silicon Hall sensor material properties, devices made of III-V semiconductors have attracted a great deal of interest by virtue of their high electron mobility combined with moderate sheet carrier densities, low temperature dependences of the output Hall voltage and large signal-to-noise ratios (S/N) [6]- [10]. However, the majority of this work to date has been concerned with single Hall elements with no reports of fully integrated Hall Effect circuit using the III-V semiconductors apart from [11]- [13] describing a hybrid circuit using ion implanted GaAs for which the performances were less than ideal due to the difficulties of Manuscript received September 21, 2014; revised November 2, 2014; accepted November 2, 2014. Date of publication November 5, 2014; date of current version January 15, 2015.…”

Boron Implant Isolation For High Temperature GaAs Integrated Circuits

“…Analysis of the conductivity with respect to the absolute value, as well as the temperature dependence, volume fraction, grain size, and surface activity of the second phase delivered convincing evidence for the adequacy of the quantitative model of "heterogeneous doping" (3,4). The basic defect inducing process for a silver halide may be written as VA + AgAg ~ AgA + V~g [1] where VA denotes the free active adsorption site and where sufficient accumulation of V~g (depletion of Ag § gives rise to an enhanced conductivity. The effect on the energy profiles near the interface is shown in Fig.…”

“…For AgC1/-y-A120~ and AgBr/~/-A120~ (where ~/-A1203 represents a highly surface active second phase), the enthalpy and entropy change of the above process (Eq. [1]) are compared with the data for a "free" surface, and a less active contact phase in Table I. Equation [1] is analogous to the process characterizing the Br~nsted surface acidity/ basicity of solids such as ~-A1203, SiO2 with respect to aqueous solutions.…”

“…[1]) are compared with the data for a "free" surface, and a less active contact phase in Table I. Equation [1] is analogous to the process characterizing the Br~nsted surface acidity/ basicity of solids such as ~-A1203, SiO2 with respect to aqueous solutions.…”

“…In recent years, considerable effort is focused to exploit the inherent high bandgap property of GaAs material for developing GaAs based devices and ICs for high temperature applications in automobile and industrial environments (1,2). Theoretical calculation of intrinsic carrier density reveals that GaAs devices could be operated around 300~ without having excessive leakage current due to thermal carrier generation (3).…”