GaAs Metal Insulator Semiconductor Field Effect Transistor with Oxi-Nitrided Gate Film Formed by New Process Utilizing Al Layer as Resist Film for Selective Etching, Oxi-Nitridation and Lift-Off
Abstract:We have reported that the oxi-nitridation of GaAs forms an insulator–semiconductor interface without deteriorating the crystallographic order of GaAs, and is applicable to the fabrication of compound semiconductor devices with metal–insulator–semiconductor (MIS) gates. A problem with oxi-nitridation is that nitrogen plasma ashes and thins the photoresist and hence restricts the possible nitrogen processing times even if a long nitridation is desirable for a better interface quality. To counteract this restrict… Show more
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.