GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review

Ajayan, J.; Nirmal, D.; Mohankumar, P.; Kuriyan, Dheena; Fletcher, A.S. Augustine; Arivazhagan, L.; Kumar, B. Santhosh

doi:10.1016/j.mejo.2019.104604

Cited by 40 publications

(16 citation statements)

References 113 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Additionally, it unlocks access to efficient binary AlAs/GaAs distributed Bragg reflectors (DBRs) as well as AlGaAs-based etch-stop and sacrificial layers for various processing techniques. MMBs consisting of III-V materials are well-established in a wide range of semiconductor devices, such as high electron mobility transistors [9] and multi-junction solar cells [10]. The functionality of these devices is generally independent of the MMB thickness, provided that a high crystalline quality is ensured.…”

Section: Motivationmentioning

confidence: 99%

Thin-Film InGaAs Metamorphic Buffer for telecom C-band InAs Quantum Dots and Optical Resonators on GaAs Platform

Sittig¹,

Nawrath²,

Kolatschek³

et al. 2021

Preprint

View full text Add to dashboard Cite

The GaAs-based material system is well-known for the implementation of InAs quantum dots (QDs) with outstanding optical properties [1]. However, these dots typically emit at a wavelength of around 900 nm. The insertion of a metamorphic buffer (MMB) can shift the emission to the technologically attractive telecom C-band range centered at 1550 nm. However, the thickness of common MMB designs limits their compatibility with most photonic resonator types [2]. Here we report on the MOVPE growth of a novel InGaAs MMB with a non-linear indium content grading profile designed to maximize plastic relaxation within minimal layer thickness. Single-photon emission at 1550 nm from InAs QDs deposited on top of this thin-film MMB is demonstrated. The strength of the new design is proven by integrating it into a bullseye cavity via nano-structuring techniques. The presented advances in the epitaxial growth of QD/MMB structures form the basis for the fabrication of highquality telecom non-classical light sources as a key component of photonic quantum technologies.

show abstract

Section: Motivationmentioning

confidence: 99%

Thin-Film InGaAs Metamorphic Buffer for telecom C-band InAs Quantum Dots and Optical Resonators on GaAs Platform

Sittig¹,

Nawrath²,

Kolatschek³

et al. 2021

Preprint

View full text Add to dashboard Cite

show abstract

“…The advantages of GaAs substrate over InP are lower manufacturing costs, improved power handling capability, and larger wafer size available for production [8]. Due to increasing number of receiving elements, there is an emphasis on cost, yield, and process stability.…”

Section: Gallium Arsenidementioning

confidence: 99%

“…Figure 4 reports commonly used structures for transmission lines at millimeter-wave where also noteworthy geometrical parameters are reported that determine the electrical features of the transmission line, namely characteristic impedance Z 0,C and phase constant β. Electronics 2019, 8,1222 8 of 19…”

Section: Propagation At Millimeter-wave On-chipmentioning

confidence: 99%

Technologies, Design, and Applications of Low-Noise Amplifiers at Millimetre-Wave: State-of-the-Art and Perspectives

et al. 2019

View full text Add to dashboard Cite

An overview of applicable technologies and design solutions for monolithic microwave integrated circuit (MMIC) low-noise amplifiers (LNAs) operating at millimeter-wave are provided in this paper. The review starts with a brief description of the targeted applications and corresponding systems. Advanced technologies are presented highlighting potentials and drawbacks related to the considered possibilities. Design techniques, applicable to different requirements, are presented and analyzed. An LNA operating at V-band (59-66 GHz) is designed and tested following the presented guidelines, demonstrating state-of-the-art results in terms of noise figure (average NF < 2 dB). A state-of-the-art table, reporting recent results available in open literature on this topic, is provided and examined, focusing on room temperature operation and performance in cryogenic environment. Finally, trends versus frequency and perspectives are outlined.2 of 18 performance at least up to 300 GHz. Few technologies are capable of fulfilling such requirement and even less are industrial-grade ones. Most are available in research labs, and some, typically the ones originating in the USA, may be subject to export restriction or end user certification.Current state-of-the-art mmw-LNA are realized either in indium phosphide (InP) high electron mobility transistor (HEMT) or gallium arsenide (GaAs) metamorphic HEMT (mHEMT) with gate lengths shorter than 100 nm. The latter parameter represents, nowadays, a "threshold" value for millimeter-wave operation. In fact, the great majority of mmw-LNAs analyzed in this review are realized featuring a gate length equal or shorter than 100 nm.HEMT is in hetero-structure transistor where a two-dimensional electron gas (2DEG) is created at the interface of two different contacting material due to their different energy bandgaps. Such 2DEG present very high electron saturation velocity and is well suited for high-frequency and low-noise applications.In the following, the main features of each technology and how each one can be gainfully employed to achieve low-noise performance are briefly described. Akgiray et al. provide a recent and detailed analysis of technologies for ultra-low-noise applications for operation at millimeter-wave and the relative transistor noise model in [3]. Indium PhosphideInP HEMT transistors have long been the semiconductor of choice for extremely low-noise amplifiers operating in RF, microwave, and millimeter-wave bands due to their superior noise and gain performance up to 300 GHz and even above. Significantly developed in the 1990s, InP HEMT monolithic microwave integrated circuits (MMICs) can be found in both defense applications (such as secure communications) and scientific applications, which typically consist of some form of very high-frequency radiometry, capable of detecting the vanishing small signals travelling from outer space. On the other hand, among all semiconductors, InP experiences slow development due to its niche market and, consequently, tends to be one of the mos...

show abstract

“…Gallium arsenide, GaAs, is a well-studied semiconductor with important technological applications in transistors [2][3][4], photovoltaic devices [5], and photon detectors [6]. Although less earth-abundant and more expensive than silicon, GaAs offers several advantages.…”

Section: Introductionmentioning

confidence: 99%

“…Unlike Si, GaAs has a direct band gap that suppresses phonon creation during photon emission, enabling its use in light emitting diodes (LEDs) [8], laser diodes [9], and optical communications [10]. The band gap of GaAs is wider than that of Si, making it more resistant to radiation damage, and a more attractive material for satellites [5] and deep space electronics [3].…”

Section: Introductionmentioning

confidence: 99%

Phonon thermodynamics and elastic behavior of GaAs at high temperatures and pressures

Herriman

Fultz

2020

Phys. Rev. B

View full text Add to dashboard Cite

The phonons of wurtzite and zinc blende GaAs were calculated at simultaneously elevated temperature and pressure, and elastic constants were calculated as functions of pressure. Pressure caused instabilities of shorterwavelength transverse acoustic modes in both wurtzite and zinc blende GaAs, causing them to fall to zero at 18 and 20 GPa, respectively. The Born stability criteria, which depend on elastic constants and only long wavelength phonons, therefore overestimated the pressure needed to induce instability at 0 K. At elevated temperatures, explicit anharmonicity pushes the onset of instability to higher pressures in both wurtzite and zinc blende GaAs. Phonon linewidth and densities of states data showed that the quasiharmonic approximation failed to account for temperature-induced phonon frequency shifts, and the quasiharmonic approximation became less reliable at elevated pressure. In general, the number of three-phonon processes increased with pressure, thereby increasing the temperature-driven broadening of phonon spectral lineshapes.

show abstract

GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review

Cited by 40 publications

References 113 publications

Thin-Film InGaAs Metamorphic Buffer for telecom C-band InAs Quantum Dots and Optical Resonators on GaAs Platform

Thin-Film InGaAs Metamorphic Buffer for telecom C-band InAs Quantum Dots and Optical Resonators on GaAs Platform

Technologies, Design, and Applications of Low-Noise Amplifiers at Millimetre-Wave: State-of-the-Art and Perspectives

Phonon thermodynamics and elastic behavior of GaAs at high temperatures and pressures

Contact Info

Product

Resources

About