GaAs Nanomembranes in the High Electron Mobility Transistor Technology

Abstract

A 100 nm MOCVD-grown HEMT AlGaAs/InGaAs/GaAs heterostructure nanomembrane was released from the growth GaAs substrate by ELO using a 300 nm AlAs layer and transferred to sapphire. The heterostructure contained a strained 10 nm 2DEG In0.23Ga0.77As channel with a sheet electron concentration of 3.4 × 1012 cm−2 and Hall mobility of 4590 cm2V−1s−1, which was grown close to the center of the heterostructure to suppress a significant bowing of the nanomembrane both during and after separation from the growth substrate. The as-grown heterostructure and transferred nanomembranes were characterized by HRXRD, PL, SEM, and transport measurements using HEMTs. The InGaAs and AlAs layers were laterally strained: ~−1.5% and ~−0.15%. The HRXRD analysis showed the as-grown heterostructure had very good quality and smooth interfaces, and the nanomembrane had its crystalline structure and quality preserved. The PL measurement showed the nanomembrane peak was shifted by 19 meV towards higher energies with respect to that of the as-grown heterostructure. The HEMTs on the nanomembrane exhibited no degradation of the output characteristics, and the input two-terminal measurement confirmed a slightly decreased leakage current.

Improved Thermal Performance of InGaAs/GaAs Nanomembrane HEMTs Transferred onto Various Substrates by Epitaxial Lift-Off

“…Electro−Thermal Simulation. 3D electrothermal simulation of single-finger GaAs HEMTs, similar to our previously fabricated ELO-transferred GaAs HEMTs onto sapphire substrate, 30 was performed assuming the measured TBC eff,GaAs/Sub and thickness-dependent κ GaAs values. At first, the model was calibrated using measured DC output and transfer characteristics operated at a maximum dissipated power density (P diss ) of 1.4 W/mm.…”

“…The simulated device was a single-finger AlGaAs/InGaAs/GaAs HEMT (W G = 60 μm, L G = 2 μm) with dimensions similar to the previously fabricated device reported earlier. 30 A cross section and description of the epitaxial layers are shown in Figure 2b. 3D Thermal simulation was performed using a Sentaurus device tool.…”

“…We previously demonstrated a successful ELO process: a complete GaAs-based HEMT heterostructure was transferred in the form of a ∼100 nm thick nanomembrane onto a sapphire substrate, on which HEMTs were then prepared. 30 Their electrical properties were compared with those of HEMTs processed on the original growth substrate. The HEMTs on the membrane/sapphire showed a negligible deterioration in electrical properties compared with those on the original substrate.…”

Effects of A sTian, Chen, Bian et al. 2024J. Phys.: Condens. Matter0000View full textAdd to dashboardCite

“…bandgap width. Metal-semiconductor field-effect transistors [1], high-electron-mobility transistors [2] and other devices prepared using GaAs crystals play an irreplaceable role in aerospace [3], mobile communications, new energy industry, and other fields. Devices such as Schottky barrier diodes fabricated using GaAs thin film solar cells [4,5] have been extensively used in integrated circuits and solar energy industries in recent years.…”

Flexible GE/GESN photodetectors with enhanced performance

“…Table 2. Selective wet etching to release target membrane [46,47]. and then transferred on glue layer coated flexible substrate.…”