2016
DOI: 10.4271/2016-01-0094
|View full text |Cite
|
Sign up to set email alerts
|

GaAs Optical Field Effect Transistor (OPFET): A High Performance Photodetector for Automotive Applications

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2018
2018
2019
2019

Publication Types

Select...
5
1

Relationship

0
6

Authors

Journals

citations
Cited by 7 publications
(2 citation statements)
references
References 17 publications
0
2
0
Order By: Relevance
“…The GaAs OPFET detector exhibits the highest detection-cum-amplification bandwidth of around 11 GHz using a gate length of 3 μm and an active layer thickness of 0.27 μm at the flux densities of 10 16 and 10 19 /m 2 -s whereas it shows a bandwidth of 11.5 GHz with a gate length of 4 μm at the intensity of 10 19 /m 2 -s, thus, showing its potential as detector-cum-amplifier in Opto-Electronic Integrated Circuits (OEICs)-based high bandwidth VLC applications such as Li-Fi (Light-Fidelity Networks). At 3 μm gate length, it exhibits the highest responsivities of 2.55×10 9 A/W and 4.1×10 6 A/W at the intensities of 10 16 and 10 19 /m 2 -s respectively. Further, the corresponding visible/UV contrast ratios are 5.21×10 7…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…The GaAs OPFET detector exhibits the highest detection-cum-amplification bandwidth of around 11 GHz using a gate length of 3 μm and an active layer thickness of 0.27 μm at the flux densities of 10 16 and 10 19 /m 2 -s whereas it shows a bandwidth of 11.5 GHz with a gate length of 4 μm at the intensity of 10 19 /m 2 -s, thus, showing its potential as detector-cum-amplifier in Opto-Electronic Integrated Circuits (OEICs)-based high bandwidth VLC applications such as Li-Fi (Light-Fidelity Networks). At 3 μm gate length, it exhibits the highest responsivities of 2.55×10 9 A/W and 4.1×10 6 A/W at the intensities of 10 16 and 10 19 /m 2 -s respectively. Further, the corresponding visible/UV contrast ratios are 5.21×10 7…”
Section: Discussionmentioning
confidence: 99%
“…Note that at constant photovoltage, the depletion width sensitivity is higher at lower doping concentrations. The transconductance increases with the increase in the optical power [6], [7], [9], [10] since at a constant doping concentration, the depletion width sensitivity is higher at larger photovoltages. However, at the highest flux density, this does not hold good where the device experiences negative sensitivity.…”
Section: Analysis Of Si Opfet At 3 µM Gate Length and 015 µM Channel Thicknessmentioning
confidence: 99%