2002
DOI: 10.1016/s0168-9002(02)00951-8
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GaAs resistor structures for X-ray imaging detectors

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Cited by 36 publications
(19 citation statements)
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“…Therefore, a sensor bias of was chosen for all other measurements. Although absolute values of the CCE could not be determined here, CCE values of 90% and higher for X-and gamma rays were reported previously [28], [29]. Pulse pile-up, which is another important issue limiting the performance of small pixel detectors at high fluxes, is not addressed in this work, since this concerns features in the readout electronics independently of the sensor material used.…”
Section: A Detector Characterizationmentioning
confidence: 91%
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“…Therefore, a sensor bias of was chosen for all other measurements. Although absolute values of the CCE could not be determined here, CCE values of 90% and higher for X-and gamma rays were reported previously [28], [29]. Pulse pile-up, which is another important issue limiting the performance of small pixel detectors at high fluxes, is not addressed in this work, since this concerns features in the readout electronics independently of the sensor material used.…”
Section: A Detector Characterizationmentioning
confidence: 91%
“…This technique previously demonstrated to provide sensors with resistivities in the order of cm [23], [28], [29] via high compensation rates. Due to the high dopant concentration, the width of the space charge regions (SCR) behind the metal (Schottky) contacts are small, leading to the bias voltage dropping mainly across the sensor and thus to a uniform distribution of the electric field [21], [24], [30].…”
Section: Detector Fabrication and Chip Descriptionmentioning
confidence: 99%
“…Thin plates (0.3-1.0 mm) of silicon (Si) or gallium arsenide compensated with chromium (GaAs) with 256×256 square pixels are used as a sensor. GaAs sensors are developed and produced in the Tomsk State University (Tomsk, Russia) [4,5,6,7]. The Joint Institute for Nuclear Research (Dubna, Russia) has wide experience in the production and operation of such kind of the detectors since 2008 [2,3].…”
Section: Timepix Detectorsmentioning
confidence: 99%
“…Nevertheless, some other workers argue that GaAs doped heavily with Cr is suitable for the purpose because Cr doping compensation will free the material from the adverse effects of EL2 centers while providing a uniform field distribution over the substrate thickness with any type of metal contacts [27,28]. In those studies, µ = 4000 cm 2 V -1 s -1 and ρ = 10 8 to 10 9 Ω cm were obtained by high-temperature diffusion Cr doping of ntype wafers of LEC-grown GaAs.…”
Section: Selection Of a Sensing Materialsmentioning
confidence: 99%