GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 μm

Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures

“…In such structures, the photogenerated electrons and holes are spatially separated, being localized in the InGaAs and GaAsSb layers, respectively. The Coulomb interaction between electrons and holes results in band bending at the InGaAs/GaAsSb heterointerface 8,20 and, consequently, to a blue shift of the primary 1e-1hh radiative transition, which is typical for the structures with type-II band alignment ( Fig. 3(b)).…”

“…At low excitation densities, we have observed a monoexponential PL decay with the lifetime of $9 ns (at 4 K), which is typical for A3B5 heterostructures with type-II band alignment. 8,12,20,21 At higher excitation levels (>20 mW), the PL transients became more complicated. After a fast initial decay with the lifetime of $1 ns, we have unexpectedly observed a substantial rise of the PL signal in a time interval 3-8 ns followed by a slow PL decay with lifetime of 9 ns.…”

Cтимулированное излучение в гетероструктурах с двойными квантовыми ямами InGaAs/GaAsSb/GaAs, выращенных на подложках GaAs и Ge/Si(001)

“…Одним из путей решения данной задачи является формирование лазерных гетероструктур с активной областью, содержащей квантовые ямы (КЯ), GaAsSb/GaAs и InGaAs/GaAsSb/GaAs. Известно, что в гетероструктурах GaAsSb/GaAs указанная длина волны излучательного перехода достигается при содержании сурьмы ∼ 35%, при этом разрыв зоны проводимости на гетерогранице GaAsSb/GaAs близок к нулю, и электроны в таких структурах оказываются слабо локализованны-ми [7][8][9], что приводит к существенному температурно-му гашению фотолюминесценции (ФЛ). В гетерострук-турах с двойными КЯ InGaAs/GaAsSb/GaAs электро-ны оказываются эффективно локализованными в слоях InGaAs, а дырки -в слоях GaAsSb.…”

Growth, strain relaxation properties and high-κ dielectric integration of mixed-anion GaAs1-ySby metamorphic materials

“…[7][8][9] Utilization of GaAsSb for multi-functional device applications demands high-quality GaAs 1-y Sb y with various antimony (Sb) alloy compositions. Thermodynamic theory predicts that a miscibility gap exists for GaAs 1-y Sb y alloys having Sb compositions in between 25% and 70%, [10][11][12] which would lead to spinodal decomposition of the GaAs 1-y Sb y material. The spinodal decomposition is expected to be suppressed to a large extent using thermodynamically non-equilibrium growth techniques, 10 such as molecular beam epitaxy (MBE).…”

“…Thermodynamic theory predicts that a miscibility gap exists for GaAs 1-y Sb y alloys having Sb compositions in between 25% and 70%, [10][11][12] which would lead to spinodal decomposition of the GaAs 1-y Sb y material. The spinodal decomposition is expected to be suppressed to a large extent using thermodynamically non-equilibrium growth techniques, 10 such as molecular beam epitaxy (MBE). However, the MBE growth of mixed-anion (III-V-V') alloys poses an increased challenge in precisely controlling the alloy composition, as compared with the MBE growth of mixed-cation (III-III'-V) counterparts, owing to the strong competition between differing incorporation rates among anions due to their dissimilar sticking coefficients.…”