GaAsSbN: a new low-bandgap material for GaAs substrates

Ungaro, G.; Roux, G. Le; Teissier, R.; Harmand, J. C.

doi:10.1049/el:19990864

Cited by 98 publications

(55 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[1][2][3][4] This effect has attracted a great deal of attention to the possibility of using these classes of III-N-V materials to produce lasers emitting within the 1.3-1.55 m wavelength range, which are strategic for telecommunications. 5,6 Among these materials, In x Ga 1Ϫx N y As 1Ϫy is an attractive alloy which has been used in active layers of lasers with pulsed and continuouswave emission at 1.31 m. 6,7 However, it has been difficult to obtain lasers of good quality using InGaNAs alloys at 1.55 m wavelength emission.…”

Section: Introductionmentioning

confidence: 99%

“…5,6 Among these materials, In x Ga 1Ϫx N y As 1Ϫy is an attractive alloy which has been used in active layers of lasers with pulsed and continuouswave emission at 1.31 m. 6,7 However, it has been difficult to obtain lasers of good quality using InGaNAs alloys at 1.55 m wavelength emission. 3,8,9 It has been shown that N-containing samples present a strong photoluminescence ͑PL͒ property degradation. 3,[9][10][11][12][13][14][15] Many works have demonstrated that the disorder in the InGaNAs alloy has a strong effect on the carrier motion, and that the radiative recombinations are generally dominated by localized excitons.…”

Section: Introductionmentioning

confidence: 99%

“…3,[9][10][11][12][13][14][15] Many works have demonstrated that the disorder in the InGaNAs alloy has a strong effect on the carrier motion, and that the radiative recombinations are generally dominated by localized excitons. [11][12][13][14][15] These works also suggest that the microscopic origin of the localized states is related either to the formation of In-N clusters, 11,13,15 or to the well width fluctuations and/or the local strain field induced by the presence of N. 11,14 Ungaro et al 3 have recently demonstrated that semiconductor alloys from the material-GaAsSbN-grown on a GaAs substrate can be used to prepare optical devices that emit light at room temperature in the 1.3-1.55 m wavelength range. 3,9 In particular, 100-Å-thick GaAs 0.825 Sb 0.15 N 0.025 /GaAs quantum wells ͑QWs͒ have demonstrated emission at 1.57 m. 9 In the present study, we investigated the temperature dependence of excitonic recombination in the GaAsSbN/GaAs QWs in the 9-296 K range.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Lourenço

Dias

Poças

et al. 2003

Journal of Applied Physics

View full text Add to dashboard Cite

GaAsSbN/GaAs strained-layer single quantum wells grown on a GaAs substrate by molecular-beam epitaxy with different N concentrations were studied using the photoluminescence ͑PL͒ technique in the temperature range from 9 to 296 K. A strong redshift in optical transition energies induced by a small increase in N concentration has been observed in the PL spectra. This effect can be explained by the interaction between a narrow resonant band formed by the N-localized states and the conduction band of the host semiconductor. Excitonic transitions in the quantum wells show a successive red/blue/redshift with increasing temperature in the 2-100 K range. The activation energies of nonradiative channels responsible for a strong thermal quenching are deduced from an Arrhenius plot of the integrated PL intensity.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Lourenço

Dias

Poças

et al. 2003

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Examples may include quarternary alloys GaAsSbN for applications in multi-junction solar cell, IR detection and emission, [24,25] highly lattice mismatched ZnO-ZnSe core-shell nanowires for PV application. [26] For somewhat structurally simpler but large structures, for instance, binary quantum dots and wires or ternary alloys, some DFT-LDA based techniques incorporating atomistic level empirical corrections to the atomic pseudopotentials have been shown able to yield rather satisfactory results to selected properties ranging from structural properties (in the DFT-LDA level) to electronic and optical properties (after applying the empirical correction, DFT-LDA-C).…”

Section: The Band Gap Errors In Dft-lda and Their Correctionsmentioning

confidence: 99%

Systematic approach for simultaneously correcting the band-gap andp−dseparation errors of common cation III-V or II-VI binaries in density functional theory calculations within a local density approximation

2015

View full text Add to dashboard Cite

We propose a systematic approach that can empirically correct three major errors typically found in the density functional theory (DFT) calculation within a local density approximation (LDA) simultaneously for a set of common cation binary semiconductors, such as III-V compounds -(Ga or In)X with X=N, P, As, Sb, and II-VI compounds (Zn or Cd)X, with X= O, S, Se, Te. By correcting (1) the binary bandgaps at high symmetry points Γ, L, X, (2) the separation of p and d orbital derived valence bands, and (3) conduction band effective masses to experimental values and doing so simultaneously for common cation binaries, the resulting DFT-LDA based quasi first-principles method can be used to predict the electronic structure of complex materials involving multiple binaries with comparable accuracy but much less computational cost than a GW level theory. This approach provides an efficient way to evaluate the electronic structures and other material properties of complex systems much needed for material discovery and design.

show abstract

“…The work on GaAsSbN / GaAs system has been somewhat limited. [6][7][8][9][10][11] Our earlier work on the GaAsSbN quantum wells 6 ͑QWs͒ shows that good quality structures with emission at 1.55 m can be reached for a N concentration of ϳ1.4%.…”

Section: Introductionmentioning

confidence: 99%

Optical studies of molecular beam epitaxy grown GaAsSbN∕GaAs single quantum well structures

Nunna

Iyer

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

In this work, the authors present a systematic study on the variation of the structural and the optical properties of GaAsSbN / GaAs single quantum wells ͑SQWs͒ as a function of nitrogen concentration. These SQW layers were grown by the solid source molecular beam epitaxial technique. A maximum reduction of 328 meV in the photoluminescence ͑PL͒ peak energy of GaAsSbN was observed with respect to the reference GaAsSb QW. 8 K and RT PL peak energies of 0.774 eV ͑FWHM of ϳ25 meV͒ and 0.729 eV ͑FWHM of ϳ67 meV͒ ͑FWHM denotes full width at half maximum͒ corresponding to the emission wavelengths of 1.6 and 1.7 m, respectively, have been achieved for a GaAsSbN SQW of N ϳ 1.4%. The pronounced S-curve behavior of the PL spectra at low temperatures is a signature of exciton localization, which is found to decrease from 16 to 9 meV with increasing N concentration of 0.9%-2.5%. The diamagnetic shift of 13 meV observed in the magnetophotoluminescence spectra of the nitride sample with N ϳ 1.4% is smaller in comparison to the value of 28 meV in the non-nitride sample, indicative of an enhancement in the electron effective mass in the nitride QWs. Electron effective mass of 0.065m o has been estimated for a SQW with N ϳ 1.4% using the band anticrossing model.

show abstract

GaAsSbN: a new low-bandgap material for GaAs substrates

Cited by 98 publications

References 6 publications

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Systematic approach for simultaneously correcting the band-gap andp−dseparation errors of common cation III-V or II-VI binaries in density functional theory calculations within a local density approximation

Optical studies of molecular beam epitaxy grown GaAsSbN∕GaAs single quantum well structures

Contact Info

Product

Resources

About