GaAsSbN-based p-i-n heterostructures for solar cell applications grown by liquid-phase epitaxy

Milanova, M.; Arnaudov, B.; Alonso‐Álvarez, Diego; Terziyska, P.

doi:10.1007/s10854-019-02728-5

Cited by 6 publications

(4 citation statements)

References 64 publications

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“…The absorption edge of GaAsSbN from SPV was confirmed by a Tauc plot as being 1.26 eV. Considering its thickness (0.5 m) and Hall carrier concentration (~10 15 cm -3 (Milanova et al, 2020)) the GaAsSbN layer is fully depleted and the photogenerated electrons are swept towards the n-GaAs layer, while the holestoward the p + -GaAs layer thus giving rise to photovoltage. The direction of the carrier drift is evidenced by the SPV phase values, which are close to zero degrees in agreement with the upward energy bands bending (in the direction towards the surface) in the p-i-n structure (Donchev, 2019).…”

Section: Surface Photovoltage Characterizationmentioning

confidence: 83%

“…It is nearly the same as the values reported in (Li et al, 2005) for in-situ annealed samples, while in other works (Lourenço et al, 2007;Nunna et al, 2007) larger values were observed. In our previous work (Milanova et al, 2020) the temperature-dependent PL spectra of the p-i-n structures were measured under higher excitation intensity (5 W/cm 2 ) and no blue shift of the PL peak position was observed at low temperatures. In the whole temperature range 20 -300 K, the PL peak energy showed a monotonous decrease with increasing temperature and this behaviour was well fitted by an empirical Varshni relation (Milanova et al, 2020).…”

Section: Photoluminescence Characterizationmentioning

confidence: 90%

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Single-junction solar cells based on p-i-n GaAsSbN heterostructures grown by liquid phase epitaxy

et al. 2020

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Section: Surface Photovoltage Characterizationmentioning

confidence: 83%

Section: Photoluminescence Characterizationmentioning

confidence: 90%

Single-junction solar cells based on p-i-n GaAsSbN heterostructures grown by liquid phase epitaxy

et al. 2020

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“…Also presented are results of PL spectra and complete p-i-n solar cell device fabricated at the Bulgarian Academy of Sciences Central Lab of Applied Physics. The approach used at the University of Liverpool is described below and method used for the single GaAsSbN layer and complete solar cell made at the Bulgarian Academy of Sciences Central Lab of Applied Physics is described in [17] [18].…”

Section: Experimental Methodsmentioning

confidence: 99%

GaAsSbN for Multi-Junction Solar Cells

Mumtaz

Milanova

Sandall

et al. 2020

2020 47th IEEE Photovoltaic Specialists Conference (PVSC)

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Multi-junction solar cells, according to the detailed balance limit, should be able to achieve efficiencies above 50 percent. Work on new materials is necessary for improvements beyond the current state of the art. In this work, we evaluate the use of GaAsSbN, which has shown promise for multi-junction solar cells, particularly targeting the 1eV cell. Epitaxial growth of this material in this work has been achieved via liquid phase epitaxy, as it can produce high quality crystalline layers. We present our initial growth and characterization results of a GaAsSbN layer. Also presented are results showing the incorporation of this material in a solar cell.

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“…At the same time, there are no theoretical and experimental data for the case of adding nitrogen to this system in the LPE growth. To establish actual growth conditions of uniform and nearly-lattice-matched layers, many experiments were performed [21][22][23] from different initial epitaxy temperatures in the temperature range of 600-540 • C. Therefore, in the development of new solar cell materials, it is important to perform rapid reliable photovoltaic (PV) quality control of the epitaxial heterostructures.…”

Section: Introductionmentioning

confidence: 99%

Surface Photovoltage Method for Photovoltaic Quality Control of GaAs-Based Solar Cells

Donchev,

Milanova

2023

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In this paper, we demonstrate the potential of the contactless surface photovoltage (SPV) method for fast and reliable control of GaAs-based solar cells directly on epitaxial heterostructures before metallization and photolithography processes. The magnitude of the SPV corresponds to the generated photovoltage in the photoactive region, which is related to the open circuit voltage of the cell. The focus of this investigation is the potential of dilute nitride compounds grown by low-temperature liquid-phase epitaxy (LPE) for application as intermediate cells in multijunction solar cells. First, SPV spectroscopy is used to determine the photosensitivity spectral range and bandgap of the grown dilute nitride compound layers. Further, the photovoltaic quality of the grown solar cell heterostructures is evaluated by comparing the magnitude of their SPV signals with that of a reference GaAs solar cell. A drastic reduction in the measured SPV is observed for nitrogen-containing solar cell structures, which correlates with the lowering of solar cell open-circuit voltage values measured under standard test conditions. Finally, solar cell structures based on nitrogen-free GaAsSb compounds with the same long-wavelength photosensitivity limit as GaAsSbN are grown by LPE. They show one order of magnitude higher SPV signal and, therefore, have a great potential for solar cell application.

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GaAsSbN-based p-i-n heterostructures for solar cell applications grown by liquid-phase epitaxy

Cited by 6 publications

References 64 publications

Single-junction solar cells based on p-i-n GaAsSbN heterostructures grown by liquid phase epitaxy

Single-junction solar cells based on p-i-n GaAsSbN heterostructures grown by liquid phase epitaxy

GaAsSbN for Multi-Junction Solar Cells

Surface Photovoltage Method for Photovoltaic Quality Control of GaAs-Based Solar Cells

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