Gain analysis of blue nitride-based lasers by small signal modulation

Abstract

With a small signal frequency-modulation of the driving current, the resonance frequency and the damping factor of the optical output power response of blue nitride-based ridge lasers grown on [0001]-plane gallium-nitride substrates were investigated with a network analyzer setup. From the linear dependence of the squared resonance frequency on the driving current, the gain coefficients of the logarithmic gain model could be extracted being 7680 cm−1 for blue nitride-based lasers. For this purpose, additional parameters such as the carrier density and the confinement factor were assigned by carrier lifetime and quantum efficiency measurements and one dimensional transfer matrix simulations, respectively.

Review—The Physics of Recombinations in III-Nitride Emitters

“…4 to analyze results. 4,17,[25][26][27][28] Recently some of the present authors investigated the detailed TREL frequency response of III-nitride LEDs, finding pronounced evidence of transport effects. 29 To provide accurate characterization, the electrical and optical responses were measured simultaneously.…”

All-Color Plasmonic Nanolasers with Ultralow Thresholds: Autotuning Mechanism for Single-Mode Lasing

“…The direct band gap of In x Ga 1−x N (0 ≤ x ≤ 1) can be tuned from near-infrared (InN, 0.65 eV) to near-ultraviolet (GaN, 3.4 eV). Moreover, InGaN possesses a very large gain coefficient (on the order of 10 4 cm −1 ), 22 which is very beneficial for design of plasmonic lasers and amplifiers. 23,24 However, it has been recognized that for conventional wurtzite-structure InGaN/ GaN heterostructures grown along the polar direction, the presence of strong polarization-induced interface charges would result in electron−hole separation in InGaN active regions, which can significantly reduce the radiative recombination efficiency.…”

“…The direct band gap of In x Ga 1– x N (0 ≤ x ≤ 1) can be tuned from near-infrared (InN, 0.65 eV) to near-ultraviolet (GaN, 3.4 eV). Moreover, InGaN possesses a very large gain coefficient (on the order of 10 4 cm –1 ), which is very beneficial for design of plasmonic lasers and amplifiers. , However, it has been recognized that for conventional wurtzite-structure InGaN/GaN heterostructures grown along the polar direction, the presence of strong polarization-induced interface charges would result in electron–hole separation in InGaN active regions, which can significantly reduce the radiative recombination efficiency . This effect is particularly severe for InGaN/GaN heterostructures with a large indium content, as the increased strain further enhances the polarization field when emitting at longer wavelengths (e.g., green and red). − Several strategies have been developed to reduce this polarization effect and increase the luminescence efficiency of InGaN/GaN heterostructure. ,− Here, we adopt InGaN@GaN core–shell nanorod emitters with nonpolar side facets for this purpose.…”

Self-Guiding Backscattering Immune Transportation of Light in the Visible Range

“…We set the material gain as g 0 = 1.5 × 10 4 cm −1 in this work, which is sufficient to compensate the loss in metallic layers. The material gain as high as 1.5 × 10 4 cm −1 can be easily obtained with a 450 nm optically pumped nitride-based laser [36]- [38]. In the presence of an externally applied magnetic field along the z-axis, the relative permittivity of the gyroelectric layers (consist of Bi-substituted Yttrium Iron Garnet) in the visible range is described by the dielec-…”