The
realization of electrically pumped organic semiconductor lasers
needs to suppress singlet–triplet annihilation (STA) as much
as possible. Generally, organic gain medium materials suffer extensive
loss of singlet excitons through STA, resulting in extremely high
lasing threshold current density (J
th)
on the order of 10–100 kA cm–2. Herein, we
study the lasing and electroluminescence (EL) properties of a new
organic gain material, named PIO, with low STA. As shown, it exhibits
remarkable optical gain and EL performance. A low lasing threshold
of 0.47 mJ cm–2 and a high Q-factor
of 6000 are well obtained in the microring resonator. In pulse-driven
organic light emitting diodes (OLEDs), a high current density of 112.4
A cm–2 is achieved. Furthermore, a dynamical model
is used to analysis exciton dynamics, gain behaviors and singlet exciton
loss channels under electrical excitation. It is found that the rate
of STA (k
ST) is at least lower than 1
× 10–10 cm3 s–1 to realize lasing emission with J
th below
the order of 10 kA cm–2. The k
ST of the doped PIO is determined to be 6.6 × 10–12 cm3 s–1. Therefore, it can be predicted
that the lasing threshold J
th of PIO is
about 1.20 kA cm–2.