GaInAsP/InP Membrane Lasers for Optical Interconnects

Abstract

Abstract-In this paper, the state-of-the art of long-wavelength GaInAsP/InP membrane semiconductor lasers, one of the most promising candidate light sources for optical interconnects and on-chip optical wiring between large-scale integrated circuits, is described. After an extensive review of research activities focused on laser preparation on either Si or Si-on-insulator substrate, the findings of our recent research activities on low power consumption lasers are presented. Specifically, our interest was set on the low-damage fabrication of strongly index-coupled grating, which is generally opted forDFB and distributed reflector (DR) lasers consisting of wire-like active regions, as well as of high index-contrast membrane waveguides. A submilliampere threshold current and a differential quantum efficiency close to 50% from the front facet were achieved in the case of the DR laser. On the other hand, a lateral current injection (LCI) structure, which can be combined with the membrane laser, was adopted for the realization of an injection-type membrane laser. The successful continuous wave operation of LCI lasers, prepared on a semiinsulating InP substrate, was achieved with moderately low threshold current at room temperature.Index Terms-DFB laser, distributed reflector (DR) laser, GaInAsP/InP, optical interconnect, optical wiring, semiconductor laser, single-mode laser, Si-on-insulator (SOI) circuits, III-V materials.

Si-Photonics-Based Layer-to-Layer Coupler Toward 3D Optical Interconnection

“…Ultimately, optical interconnection on electrical large-scale integration (LSI) circuits should be the target to enhance computing speed. To realize such on-chip interconnections, we proposed semiconductor membrane InP-based photonic integrated circuits (PICs) and demonstrated low threshold and high efficiency lasers on an Si substrate [1]- [4].…”

High-bandwidth uni-traveling carrier waveguide photodetector on an InP-membrane-on-silicon platform

“…It not only allows for monolithic integration of highperformance InP-based light sources on silicon [1][2][3][4][5], but also provides photodetectors (PDs) with high efficiency and low dark current [6]. Currently, the reported bandwidths of heterogeneously integrated InP-based PDs [7,8] are lower than those of Ge-based PDs [9,10].…”

Temperature effects in metal-clad semiconductor nanolasers

“…In the past decade, lasing has been demonstrated in numerous wavelength and sub-wavelength scale structures, including dielectric micro-discs [1][2][3][4], photonic crystals [5][6][7][8][9], nanowires [10,11] and nanorods [12], nano-membranes [13][14][15], micro-pillars [16][17][18], and metal-clad nano-cavities [19][20][21][22][23][24]. While all these devices enable fundamental research of various nanoscale phenomena [25][26][27], the design and analysis of nanolasers have focused almost exclusively on the optical mode, i.e., pure electromagnetic (EM) consideration, usually at 4.5 K, 77 K and room temperature.…”