2016
DOI: 10.1016/j.mssp.2016.03.026
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GaInN/GaN solar cells made without p-type material using oxidized Ni/Au Schottky electrodes

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Cited by 7 publications
(4 citation statements)
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“…Circular ohmic contacts were made by depositing Ti/Al/Ni/Au with an e-beam and annealing at 850 °C for 30 s in a N 2 atmosphere, which is shown in Figure 1f3. 30 Conductive indium tin oxide (ITO) was sputtered at the surface of p-GaN as the current spreading layer, due to its high transparency in the visible spectral region. 31 Finger electrodes (Ni/Au 230 nm) were deposited on the ITO, as shown in Figure 1f4.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Circular ohmic contacts were made by depositing Ti/Al/Ni/Au with an e-beam and annealing at 850 °C for 30 s in a N 2 atmosphere, which is shown in Figure 1f3. 30 Conductive indium tin oxide (ITO) was sputtered at the surface of p-GaN as the current spreading layer, due to its high transparency in the visible spectral region. 31 Finger electrodes (Ni/Au 230 nm) were deposited on the ITO, as shown in Figure 1f4.…”
Section: Resultsmentioning
confidence: 99%
“…After that, a “back”-shaped area was etched down about 1 μm to expose the n-GaN for ohmic contact formation and define the active mesa. Circular ohmic contacts were made by depositing Ti/Al/Ni/Au with an e-beam and annealing at 850 °C for 30 s in a N 2 atmosphere, which is shown in Figure f3 . Conductive indium tin oxide (ITO) was sputtered at the surface of p-GaN as the current spreading layer, due to its high transparency in the visible spectral region .…”
Section: Results and Discussionmentioning
confidence: 99%
“…Previously, the use of Schottky barrier (SB) contacts which is one possible type of ED was demonstrated to realize SB GaInN/GaN solar cell devices without any p-doped region [49], [50]. GaN based n-channel SB-MOSFET has also been reported before [51].…”
Section: Role Of Electrostatic Doping (Ed)mentioning
confidence: 99%
“…Other than in conventional Si-based material, the SB based solar cell has also been demonstrated in CNTs [91], cadmium sulphide (CdS) [92] and molybdenum disulfide (MoS 2 ) [93]. In addition, an SB based solar cell has been demonstrated in the GaInN/GaN material system without any p-type doped region [49], [50].…”
Section: 4(b)mentioning
confidence: 99%