GaInNAs QW with GaNAs intermediate layer for long wavelength laser

Abstract

In this paper, we propose a structure, the GaInNAs QW with GaNAs intermediate layer (IML) which shows better performance in the optical properties as compared to the commonly used GaInNAs-GaAS rectangular quantum wells. The simulation software PICS3D is used in this work. Photoluminescence peak wavelength of 1327-nm GaInNAsGaNAs IML laser has been achieved with a low threshold current 195mA and relatively high characteristic temperature, T 0 of 270K. The IML structure is a promising invention for long wavelength GaAs-based laser in for the application in the fiber optic communication.Index term -GaInNAs, long wavelength lasers, quantum well.

Near-threshold high spin amplification in a 1300 nm GaInNAs spin laser

“…The material losses a loss for GaInNAs have been reported as 700 m −1 [35,36], and the mirror reflectivities R R , B t for this device are 99.2% and 99.8% [7]. The effective cavity length L cav is the 3-λ cavity length [7] of 3.9 μm.…”