GaInSb photodetectors developed from single crystal bulk grown materials

Yuan, Henry; Grubisic, D.; Wong, T. T.S.

doi:10.1007/s11664-999-0192-x

Cited by 11 publications

(3 citation statements)

References 8 publications

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“…They are optimized for specific wavelength ranges, allowing for various applications, including communication, sensing, imaging and night vision devices [4][5][6][7]. In three-dimensional (3D) materials, the transport of photogenerated carriers (electrons and holes) can be relatively slow due to the longer distance they need to travel, this can result in longer response time and lower sensitivity in photodetection applications [8]. To mitigate these limitations, low-dimensional materials have been focussed on as the extraordinary properties of these materials render them highly promising for various applications in electronics, energy, catalysis and medicine [9,10].…”

Section: Introductionmentioning

confidence: 99%

Bismuth sulfide quantum dots-CsPbBr₃ perovskite nanocrystals heterojunction for enhanced broadband photodetection

Lalita,

Yadav,

Sharma

et al. 2024

Nano Ex.

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Colloidal semiconductor nanocrystals (NCs) or quantum dots (QDs) have shown great potential for solution-processable photodetector due to their exceptional optical and electronic properties. However, broadband and sensitive photodetection from single QDs- based devices is quite challenging. Nano-heterojunction with proper band alignment based on two different materials offers significant advantages for developing broadband photodetector. Herein, we report ultraviolet–visible (UV–Vis) to near-infrared (NIR) light-responsive photodetector based on solution-processed nano-heterojunction of visible light absorber CsPbBr3 perovskite NCs and wide absorption range, environment-friendly Bi2S3 QDs. Our results demonstrate that the CsPbBr3–Bi2S3 nano-heterojunction-based photodetector has higher responsivity (380 μA/W at a wavelength of 532 nm) and higher specific detectivity (1.02×105 Jones), as compared to the individual CsPbBr3 or Bi2S3 QDs based devices. Interestingly, the detection wavelength range of our heterojunction device is further extended to the near-infrared region (1064 nm) due to the broadband absorption range of Bi2S3 QDs, which is not observed in the visible light absorber CsPbBr3 devices. Remarkably, the responsivity of the heterojunction device is 90 μA/W. The enhanced specific detectivity and the broadband response of hybrid devices are attributed to the improved charge carrier generation, efficient charge separation and transfer at the interface between CsPbBr3 and Bi2S3 QDs.

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Section: Introductionmentioning

confidence: 99%

Bismuth sulfide quantum dots-CsPbBr₃ perovskite nanocrystals heterojunction for enhanced broadband photodetection

Lalita,

Yadav,

Sharma

et al. 2024

Nano Ex.

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“…Applications of ternary alloys as substrates are related to the possibility to change the lattice constant as a function of concentration of a third element [4,6,5]. The presence of indium in the Ga 1Àx In x Sb compounds modifies the lattice parameter of the alloy from 6.09 Å when x = 0 (GaSb) to 6.48 Å when x = 1 (InSb), and also the bandgap from 0.72 eV (x = 0) to 0.18 eV (x = 1) [4,6,5]. The use of GaInSb as substrate for the thermophotovoltaic cells necessitates low band gaps, which correspond to x > 0.2 [7].…”

Section: Introductionmentioning

confidence: 99%

Study of In distribution on GaInSb:Al crystals by ion beam techniques

Streicher

Corregidor

Catarino

et al. 2016

Nuclear Instruments and Methods in Physics Research Section B:

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“…Such materials are Bi x Sb 1– x , Ge x Si 1– x , Ga x In 1– x Sb solid solutions. They have prospective applications for quantum electronics, photonics, thermoelectricity, and X-ray monochromators. − The component inhomogeneity in these crystals essentially influences their electrophysical properties . Therefore, different types of inhomogeneity in these solid solutions and the reason for their formation are carefully studied. − Theoretically and experimentally it was shown that convection is the main reason for the appearance of component inhomogeneity in the cross section of a crystal. , …”

Section: Introductionmentioning

confidence: 99%

Crystal Growth of Bi_xSb_1–x Solid Solutions with an Ultrasound Presence in Two Orthogonal Directions

Kozhemyakin

2016

Crystal Growth & Design

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A modified Stepanov method of crystal growth with the application of ultrasound in two orthogonal directions was developed to reduce the component inhomogeneity. Ultrasonic waves at frequencies of 2.5 and 5 MHz were introduced into the melt parallel and perpendicular to the pulling axes of the grown crystals. Bi x Sb 1−x solid solution crystals were grown with a square and round cross section. The crystals grown with a square cross section had a smaller Sb inhomogeneity than the crystals with round cross section. They were grown in the presence of ultrasound simultaneously in two orthogonal directions in the melt and increased pulling rate. We explain the effect of two orthogonal standing waves to eliminate convection in the melt under the solid−liquid interface inside of a graphite die due to complex oscillation of the melt particles. The component inhomogeneity was measured before and after melt crystallization in a Czochralski crucible by a radioactive analysis method. The component inhomogeneity after melt crystallization increased to ±17% with the increase of the mass component difference (In, Sn, Sb, and Bi) from 1 to 85 amu and the melt overheating above the melting point to 100 °C.

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GaInSb photodetectors developed from single crystal bulk grown materials

Cited by 11 publications

References 8 publications

Bismuth sulfide quantum dots-CsPbBr₃ perovskite nanocrystals heterojunction for enhanced broadband photodetection

Bismuth sulfide quantum dots-CsPbBr₃ perovskite nanocrystals heterojunction for enhanced broadband photodetection

Study of In distribution on GaInSb:Al crystals by ion beam techniques

Crystal Growth of Bi_xSb_1–x Solid Solutions with an Ultrasound Presence in Two Orthogonal Directions

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GaInSb photodetectors developed from single crystal bulk grown materials

Cited by 11 publications

References 8 publications

Bismuth sulfide quantum dots-CsPbBr3 perovskite nanocrystals heterojunction for enhanced broadband photodetection

Bismuth sulfide quantum dots-CsPbBr3 perovskite nanocrystals heterojunction for enhanced broadband photodetection

Study of In distribution on GaInSb:Al crystals by ion beam techniques

Crystal Growth of BixSb1–x Solid Solutions with an Ultrasound Presence in Two Orthogonal Directions

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Bismuth sulfide quantum dots-CsPbBr₃ perovskite nanocrystals heterojunction for enhanced broadband photodetection

Bismuth sulfide quantum dots-CsPbBr₃ perovskite nanocrystals heterojunction for enhanced broadband photodetection

Crystal Growth of Bi_xSb_1–x Solid Solutions with an Ultrasound Presence in Two Orthogonal Directions