Gallium and indium nanomaterials for environmental protection

Panayotova, Marinela; Panayotov, Vladko; Oliinyk, Tetiana

doi:10.1051/e3sconf/202016601008

Cited by 8 publications

(3 citation statements)

References 38 publications

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“…Ga-based sensors are used for environmental monitoring, particularly in detecting pollutants and hazardous chemicals, humidity, and so on. The sensitivity and accuracy of these sensors can be improved by understanding the interaction of Ga with other elements and compounds at the atomic level [13,14].…”

Section: Introductionmentioning

confidence: 99%

Fine structure resolved excitation cross sections of singly ionized Ga for the modeling and diagnostics of Ga plasmas

Suresh,

Priti,

Srivastava

et al. 2024

Plasma Sources Sci. Technol.

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Calculation of electron impact excitation cross sections for singly charged Ga ions plays a crucial role in plasma modeling, facilitating the comprehension of plasma behavior, characteristics, and dynamics in diverse domains, such as astrophysics, fusion research, the semiconductor industry, etc. In the available literature, there is a notable scarcity of, or even a complete absence of, these cross sections. Hence, in the present work, electron impact excitation cross sections are calculated for the transitions from the fine structure resolved energy levels of the configurations 4s2 and 4s4p to the fine structure resolved energy levels of the configurations 4s4p, 4s5s, 4p2 and 4s4d of the singly charged Ga ion (Ga+) using the relativistic distorted wave approximation theory with the target states represented by multi configurational Dirac Fock wavefunctions. The cross sections are calculated for projectile electron energy varying from threshold to 500 eV. Furthermore, the electron impact excitation rate coefficients for all the transitions under investigation are also calculated for electron temperatures ranging from 0.5 to 5 eV. In addition, analytic fitting of the rate coefficients is also performed, providing a practical resource for directly utilizing in plasma modeling applications.

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Section: Introductionmentioning

confidence: 99%

Fine structure resolved excitation cross sections of singly ionized Ga for the modeling and diagnostics of Ga plasmas

Suresh,

Priti,

Srivastava

et al. 2024

Plasma Sources Sci. Technol.

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“…Continuing exposure to O 3 increases the risk of respiratory diseases, and at high concentrations of O 3 , has lethal effects. OSHA places the PEL at 0.1 ppm, and the NIOSH's REL is 0.1 ppm [18]. Ammonia (NH 3 ) is an irritant gas and its influence increases with its concentration, also is one of the most common chemicals manufactured and supplied to diverse areas around globe with usage for nitrogen-based fertilizers, pharmaceuticals, cleaning products, refrigeration and explosives.…”

Section: Introductionmentioning

confidence: 99%

Sensory Sensitivity to the Form of β-Ga2O3 Nanoparticles

2022

Nanosistemi, Nanomateriali, Nanotehnologii

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The electronic characteristics of pure -Ga 2 O 3 nanoparticles with the same number of atoms but of different shapes (spherical or prism-like forms) and with the addition of CO, NH 3 , O 3 molecules near the Ga atom or the O atom are investigated by means of the methods of the theories of electron density functional and pseudopotential from the first principles with application of the own program code. As found, the nanoparticles of both forms can serve as effective resistive detectors of CO and NH 3 molecules. A brighter reaction to the CO molecule is recorded in a spherical particle, and a brighter reaction to the NH 3 molecule is recorded in a prism-like particle. In this case, the sensitive place of the nanoparticles is located near the Ga atoms, whereas only the spherical nanoparticles effectively respond to O 3 molecules by increasing their conducting properties. In this case, the sensitive place of the nanoparticles is located near the O atoms.З використанням методів теорій функціоналу електронної густини та псевдопотенціялу із перших принципів в рамках власного програмного коду досліджено електронні характеристики наночастинок -Ga 2 O 3 , що містили однакову кількість атомів, але були різних форм (сферичної та призмоподібної), в оточенні газових молекул CO, NH 3 , O 3 , що локалізувалися поблизу атомів Ga або О, чи то без молекул. Було встановлено, що наночастинки обох форм можуть служити ефективними резистивними детекторами молекул CO й NH 3 . Більш яскраву реакцію на молекули СО було зафіксовано у сферичної частинки, а щодо молекул NH 3 -у призмоподібної частинки. Воднораз активна ділянка наночастинок як детекторів локалізувалася біля атомів Ga. На молекули О 3 ефективно реаґували тільки сферичні наночастинки, збільшуючи свою провідність. У цьому випадку активна ділянка наночастинок локалізувалася біля атомів О.

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“…However, improvements in all the above-mentioned directions cannot be achieved without further research on the mechanisms of the proceeding reactions and phenomena and on other impacting factors. Indeed, much work is still required for the application of new materials in the real life devices [26].…”

Section: Introduction: Gas Sensing For Health Protectionmentioning

confidence: 99%

Fluctuation-Enhanced Sensing (FES): A Promising Sensing Technique

2020

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Fluctuation-enhanced sensing (FES) is a very powerful odor and gas sensing technique and as such it can play a fundamental role in the control of environments and, therefore, in the protection of health. For this reason, we conduct a comprehensive survey on the state-of-the-art of the FES technique, highlighting potentials and limits. Particular attention is paid to the dedicated instrumentation necessary for the application of the FES technique and also in this case limits and possible future developments are highlighted. In particular, we address resolution, measurement speed, reproducibility, memory, noise, and other problems such as the influence of humidity. A number of techniques and guidelines are proposed to overcome these problems. Circuit solutions are also discussed.

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Gallium and indium nanomaterials for environmental protection

Cited by 8 publications

References 38 publications

Fine structure resolved excitation cross sections of singly ionized Ga for the modeling and diagnostics of Ga plasmas

Fine structure resolved excitation cross sections of singly ionized Ga for the modeling and diagnostics of Ga plasmas

Sensory Sensitivity to the Form of β-Ga2O3 Nanoparticles

Fluctuation-Enhanced Sensing (FES): A Promising Sensing Technique

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