GALLIUM ANTIMONIDE (<font>GaSb</font>)

Vul, A. Ya.

doi:10.1142/9789812832078_0006

Cited by 8 publications

(8 citation statements)

References 7 publications

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“…They have been commonly used for TPV cells' simulation purposes. The published data on the intrinsic concentration range between values separated by more than one order of magnitude, such as 1.5 × 10 11 cm −3 [4], 1.4 × 10 12 cm −3 [16,17], 1.5 × 10 12 cm −3 [18], 1.7 × 10 12 cm −3 [13] and 1.8 × 10 12 cm −3 [19]. However, no expression for the variation with temperature has been published to date.…”

Section: Intrinsic Carrier Concentrationmentioning

confidence: 99%

“…The data on effective masses are summarized in table 1. Nevertheless, the difference between energy minima E ,L has been revised and taken as 85 meV [18,20,21]. It is very important to use an accurate value for this energy difference due to its large influence on the intrinsic concentration.…”

Section: Intrinsic Carrier Concentrationmentioning

confidence: 99%

“…It is very important to use an accurate value for this energy difference due to its large influence on the intrinsic concentration. A value of 726.7 meV for E g at 300 K has also been taken from [18]. Table 1 also shows the calculated n i values at 300 K for GaSb using the maxima, minima and averaged set of effective electron and hole masses.…”

Section: Intrinsic Carrier Concentrationmentioning

confidence: 99%

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Temperature-dependent GaSb material parameters for reliable thermophotovoltaic cell modelling

Martín

Algora

2004

Semicond. Sci. Technol.

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GaSb photovoltaic cells are the most common choice for receivers in thermophotovoltaic (TPV) systems. Although nowadays their manufacturing technology is well established, a theoretical simulation frame for their modelling under real TPV operating conditions is still not fully developed. This is basically due to the lack of a reliable and accurate set of GaSb material parameters as input for the semiconductor simulation tools. Thorough GaSb TPV cell models are needed to understand the electro-optical behaviour of the cells and eventually are essential in improving their design. This work will try to go beyond this key issue, carefully analysing and reviewing some of the key parameters for GaSb. A complete set of material parameters, including revised values for the intrinsic concentration, the electron and hole mobilities and the absorption coefficient, is given based on extended reviews of previously published data. For the first time, estimations for their temperature dependences are introduced. Finally, GaSb TPV cells are manufactured and characterized inside a real TPV system prototype. The comparisons between the electrical measurements and the model theoretical predictions confirm the validity of the proposed set of GaSb material parameters and their temperature dependences.

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Section: Intrinsic Carrier Concentrationmentioning

confidence: 99%

Section: Intrinsic Carrier Concentrationmentioning

confidence: 99%

Section: Intrinsic Carrier Concentrationmentioning

confidence: 99%

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Temperature-dependent GaSb material parameters for reliable thermophotovoltaic cell modelling

Martín

Algora

2004

Semicond. Sci. Technol.

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“…1 was constructed by identifying the lowest energy solution of Eq. 4 over a range of A and E g values [10,12,31], fixing other model parameters at values appropriate for InAs/GaSb QWs: electron-hole layer separation d = 0.3a * B ∼ 100Å, m e = 0.023m 0 , m h = 0.4m 0 , and ∼ 15 0 [32,33]. (a * B ∼ 365Å and Ry * ∼ 1.3meV .)…”

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confidence: 99%

Time-Reversal Symmetry-Breaking Nematic Insulators near Quantum Spin Hall Phase Transitions

Xue

MacDonald

2018

Phys. Rev. Lett.

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We study the phase diagram of a model quantum spin Hall system as a function of band inversion and band-coupling strength, demonstrating that when band hybridization is weak, an interaction-induced nematic insulator state emerges over a wide range of band inversion. This property is a consequence of the long-range Coulomb interaction, which favors interband phase coherence that is weakly dependent on momentum and therefore frustrated by the single-particle Hamiltonian at the band inversion point. For weak band hybridization, interactions convert the continuous gap closing topological phase transition at inversion into a pair of continuous phase transitions bounding a state with broken time-reversal and rotational symmetries. At intermediate band hybridization, the topological phase transition proceeds instead via a quantum anomalous Hall insulator state, whereas at strong hybridization interactions play no role. We comment on the implications of our findings for InAs/GaSb and HgTe/CdTe quantum spin Hall systems.

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“…(b-c) and (d-e) are the equilibrium energy level diagrams for the materials selected for Modes II and III, respectively. The band offset and electron affinity data are from ref. − X in (b, c) denotes the Χ point of the conduction band of AlAs. (b) and (d) are along the source-QD-drain direction, while (c) and (e) are drawn along the gate-dot-substrate path.…”

Section: Simulation Of the Potential Change In Sqdspdmentioning

confidence: 99%

Detecting Single Photons Using Capacitive Coupling of Single Quantum Dots

Zhang

Wang

et al. 2018

ACS Photonics

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Capturing single photons through light−matter interactions is a fascinating and important topic for both fundamental research and practical applications. The light− matter interaction enables the transfer of the energy of a single photon (∼1 eV) to a bound electron, making it free to move either in the crystal lattice or in the vacuum. In conventional single photon detectors (e.g., avalanche photodiodes), this free electron triggers a carrier multiplication process which amplifies the ultraweak signal to a detectable level. Despite their popularity, the timing jitter of these conventional detectors is limited to tens of picoseconds, mainly attributed to a finite velocity of carriers drifting through the detectors.Here we propose a new type of single photon detector where a quantum dot, embedded in a single-electron transistor like device structure, traps a photogenerated charge and gives rise to a sizable voltage signal (∼7 mV per electron or hole by simulation) on a nearby sense probe through capacitive coupling (with a capacitance ∼ aF). Possible working modes of the proposed detector are theoretically examined. Owing to a small lateral dimension of the quantum dot, detailed analyses reveal that the intrinsic timing jitter of the proposed detector is in the femtosecond to subpicosecond range, and the intrinsic dark count rate is negligible up to moderately high temperatures. These figures of merit are orders of magnitude superior to those of the state-of-the-art single photon detectors work in the same spectral range, making the proposed detector promising for timing-sensitive and quantum information applications.

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GALLIUM ANTIMONIDE (GaSb)

Cited by 8 publications

References 7 publications

Temperature-dependent GaSb material parameters for reliable thermophotovoltaic cell modelling

Temperature-dependent GaSb material parameters for reliable thermophotovoltaic cell modelling

Time-Reversal Symmetry-Breaking Nematic Insulators near Quantum Spin Hall Phase Transitions

Detecting Single Photons Using Capacitive Coupling of Single Quantum Dots

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