gallium antimonide (GaSb), shallow impurities and defects

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doi:10.1007/10860305_130

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“…The fitted energies are 0.716, 0.715, and 0.706 eV, respectively, for the tensile-strained Ge-related PL feature B of the samples #GA, #GB, and #GC. This Ge-related PL feature is ascribed to the direct-gap transition of Ge nanolayer rather than the transition of Ge nanoparticles or Ge doping or dislocations because 1) it also emerges in the sample #GA without nanoparticle, 2) the binding energy of Ge doping level in GaSb is about 10 meV, [29] and 3) neither 60 nor pure edge dislocation was seen in the Ge nanolayer by transmission electron microscopy. [16] With the identification of the direct-gap PL from the tensilestrained Ge nanolayer, it is interesting to explore the evolution of the PL process with temperature [30][31][32] and to check if the photoinduced carriers will thermally redistribute.…”

Section: Resultsmentioning

confidence: 95%

Photoluminescence Evolution with Deposition Thickness of Ge Nanostructures Embedded in GaSb

Dou

Chen

et al. 2022

Physica Status Solidi (b)

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Germanium (Ge) possesses the intriguing properties of the tunability of indirect to direct bandgap by tensile strain and hence the enhancement of optical and electronic performances, which makes tensile-strained Ge very promising for optoelectronic integrated light sources. [1][2][3][4] Theoretically, a minimum 2% biaxial tensile strain is necessary for the indirect-to-direct bandgap conversion, [3,5] which is, unfortunately, much higher than that induced by the typical Ge-Si thermal mismatch of %0.25%. [6,7] While as an alternative high n-type doping was executed to push ahead with the directgap electronic transition by filling the indirect conduction band states, [8] the threshold was inevitably increased and the luminescent performance degraded, [9] and therefore that how to introduce higher tensile strain to Ge become a hot topic.A micromachine was designed to perform a tensile strain of about 2.7% on a Ge nanomembrane, well beyond the critical stain, to demonstrate the concept of the tensile-strain-induced light emission enhancement at room temperature. [10,11] Ge nanostructures embedded in latticemismatch III-V group matrix were another strategy introduced to realize highly tensile-strained Ge. [1,4,12,13] For example, a tensile strain of about 5% is reached in the self-assembled Ge/InAlAs quantum dots grown on InP substrate. [14,15] Different from the growth of Ge on InP and/or InAs that follows the the Volmer-Weber mode without Ge wetting layer, Ge embedded in antimonide obeys the Stranski-Krastanov growth mode and a clear tensile-strained 2D nanolayer exists. [15,16] As a result and owing to not only the large lattice mismatch of about 7.7% but also the presence of tensile-strained Ge nanolayer, GaSb is a preferred candidate as the matrix of highly

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