Gallium Arsenide

Brozel, M.R.

doi:10.1007/978-0-387-29185-7_23

Cited by 4 publications

(2 citation statements)

References 71 publications

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“…that even at the highest fluence (5 nm2 ), the disorder level remains very weak, confirming that part of the defects created by S n are annealed by the Fe 9+ ion beam. Likewise, S ) 0.18 while it is 1 for the sole S n irradiation.…”

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confidence: 68%

“…However, in the early 2000's, advances in mobile telephony, compact-disc technology, and fibreoptic communications have boosted investments in GaAs research and development, leading to significant progresses in materials and fabrication technology. Originally, the interest in GaAs arose from its unusual band structure (as compared to that of Si for instance), which exhibits several features interesting for many electronics and optoelectronics applications (see [2] for a review). For instance, a direct band-gap results in efficient emission of photons and GaAs has then become the base material for efficient infra-red light-emitting diodes (LEDs) [3].…”

Section: Introductionmentioning

confidence: 99%

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Effect of energy deposition on the disordering kinetics in dual-ion beam irradiated single-crystalline GaAs

Debelle

Gutierrez

Boulle

et al. 2022

Journal of Applied Physics

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The damage induced in GaAs crystals irradiated with dual-ion beam (low-energy I2+ and high-energy Fe9+), producing simultaneous nuclear ( Sn) and electronic ( Se) energy depositions, was investigated using several characterization techniques. Analysis of the damage buildup shows that Sn alone (single 900 keV ion beam) leads, in a two-step process, to full amorphization of the irradiated layer (at a fluence of 1.5 nm−2) and to the development of a high (2.2%) elastic strain. Conversely, only one step in the disordering process is observed upon dual-ion beam irradiation (i.e., 900 keV I2+ and 27 MeV Fe9+, Sn& Se); hence, amorphization is prevented and the elastic strain remains very weak (below 0.2%). These results provide a strong evidence that, in GaAs, the electronic energy deposition can induce an efficient dynamic annealing of the damage created in collision cascades formed during nuclear energy deposition.

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confidence: 68%

Section: Introductionmentioning

confidence: 99%

Effect of energy deposition on the disordering kinetics in dual-ion beam irradiated single-crystalline GaAs

Debelle

Gutierrez

Boulle

et al. 2022

Journal of Applied Physics

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Design considerations for gallium arsenide pulse compression photoconductive switch

Dong

Dowling

Hau‐Riege

et al. 2022

Journal of Applied Physics

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In this paper, we present the physics and design-space exploration of a novel pulse compression photoconductive switch (PCPS) using semi-insulating gallium arsenide (GaAs) operating in the negative differential mobility (NDM) regime of electron transport. We systematically quantify the relationship between the PCPS performance and various design options, including contact separation, laser energy and placement, and trap dynamics. Specifically, we report the full-width at half-maximum and the peak output current generated by the PCPS as a function of applied electrical and optical bias. We discuss the optimal spacing between the electrodes and the distance of the laser spot to the anode to achieve higher electron confinement and superior radio-frequency (RF) metrics. Reducing the laser energy is important to prevent the appearance of secondary peaks due to diffusive transport, but there exists a trade-off between the bandwidth and the maximum current of the PCPS. We also compare the PCPS response with and without trap dynamics and find that the electrostatic screening from the trap-induced space charge is time-independent when the trapping time constant is set larger than the recombination lifetime. Overall, trap dynamics are detrimental to performance, unless the compensation doping scheme to achieve semi-insulating GaAs is carefully selected. Results presented in this paper can be used by experimentalists to fine-tune the PCPS design parameters to meet the specifications of various RF applications. Moreover, our results will provide a strong theoretical basis to the measurements of PCPS devices using GaAs and other NDM materials under investigation.

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Characterization of GaAs and GaAs/Cr/GaAs interfacial layers fabricated via magnetron sputtering on silicon (100)

Pulzara-Mora,

Doria-Andrade,

Bernal-Correa

et al. 2024

DJNB

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The obtaining and study of semiconductor materials have been topics of interest for decades. However, alternatives that allow greater versatility at the time of their application have yet to be explored, such as the inclusion of some transition metals. In this work, we report the obtaining of GaAs and GaAs/Cr/GaAs layers, which were prepared by r.f. magnetron sputtering on a Si (100) substrate by varying the deposition time of the intermediate Cr layer for t = 5 min and 10 min, respectively. Scanning electron microscopy in cross-section was carried out to determine the growth mode of the GaAs and GaAs/Cr/GaAs films. The percentage of the elements in the GaAs/Cr/GaAs thin films was determined through energy dispersive spectroscopy (EDS) in cross-sections along the entire layer thickness. X-ray diffraction and micro-Raman spectroscopy at room temperature were measured to analyze the formation of CrAs and GaCr binary phases by diffusion across interlayers. Finally, we conclude on the possible use of this technique to obtain semiconductor alloys with Cr inclusion.

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Gallium Arsenide

Cited by 4 publications

References 71 publications

Effect of energy deposition on the disordering kinetics in dual-ion beam irradiated single-crystalline GaAs

Effect of energy deposition on the disordering kinetics in dual-ion beam irradiated single-crystalline GaAs

Design considerations for gallium arsenide pulse compression photoconductive switch

Characterization of GaAs and GaAs/Cr/GaAs interfacial layers fabricated via magnetron sputtering on silicon (100)

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