Gallium arsenide avalanche-type S-diode based on a n+-?-?-n structure

Khludkov, S. S.; Толбанов, О. П.; Koretskii, A. V.

doi:10.1007/bf00893001

Cited by 8 publications

(7 citation statements)

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“…This, in turn, simultaneously results in a decrease in the Fe concentration gradient and, correspondingly, to an increase in U sw . To explain our experimental dependence of U sw on d π , we assume that in addition to the effect of R S on U sw , an alternative mechanism acts that is due to electron injection from the forward-biased contact to the π-layer [14].…”

Section: Discussionmentioning

confidence: 99%

The effect of base thickness on the reverse volt–ampere characteristic of an S-diode

Prudaev

Khludkov

2009

Russ Phys J

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The effect of base thickness (π-layer thickness d π ) on the reverse current-voltage characteristic and the switching voltage U sw in a diffusion avalanche S-diode is studied. It is shown that the current-voltage characteristic shape is independent of d π , whereas the switching voltage U sw weakly decreases (to 40%) with a significant (4-5-fold) decrease in d π . It is assumed that the results obtained can be explained, taking into account electron injection from the forward-biased contact to the π-layer.

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Section: Discussionmentioning

confidence: 99%

The effect of base thickness on the reverse volt–ampere characteristic of an S-diode

Prudaev

Khludkov

2009

Russ Phys J

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“…Later these data were supported by the measurements made using indirect electrical methods [6]. Therefore, we chose the data obtained in [5] for comparison with our experimental evidence.…”

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confidence: 80%

“…Iron diffusion in GaAs was studied in [2][3][4][5][6] using a radioactive-isotope method. There is a wide scatter among the published data on the diffusion and solubility of iron in GaAs.…”

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confidence: 99%

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Diffusion and solubility of electrically active iron atoms in gallium arsenide

Prudaev

Khludkov

2008

Russ Phys J

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621.785.3; 669.782 Iron diffusion in GaAs at arsenic pressure 1 atm is studied. The temperature dependences of the diffusion coefficient and solubility of electrically active iron atoms in GaAs are determined. The dependences can be described by the Arrhenius equations with the following parameters: D 0 = 1.61 cm 2 /s and E (2.16 ± 0.47) = eV (for diffusion) and 0 23 S N 4.62 10 = ⋅ cm -3 and S E (1.61 ± 0.16) = eV (for solubility). The results obtained are compared with the earlier published data. The concentration of electrically active iron atoms is shown to be about 2 times lower than the total iron concentration in GaAs.Keywords: iron diffusion, gallium arsenide, temperature dependence, diffusion coefficient.In GaAs, impurity Fe atoms form deep acceptor centers with the energy level being about 0.5 eV higher than the valence band top, which makes it possible to obtain semiinsulating GaAs with the specific resistance about 10 5 Ω·cm. The structures based on GaAs doped with iron during diffusion are used for fabrication of a number of devices, such as avalanche S-diodes, photodetectors, and ionizing radiation detectors [1].Iron diffusion in GaAs was studied in [2-6] using a radioactive-isotope method. There is a wide scatter among the published data on the diffusion and solubility of iron in GaAs. In this work, we report on the results of studying the diffusion and solubility of electrically active iron atoms in n-GaAs for the case of unlimited source diffusion. The diffusion coefficient and solubility of Fe in GaAs were determined using the data on the thickness of high-resistance layers formed by Fe diffusion in GaAs.We studied the samples of the GaAs grown by the Czochralski method. The electron concentration n in the samples varied in the range from 2·10 16 up to 6.5·10 17 cm -3 . Diffusion was performed from a deposited ≈50 nm thick iron layer in evacuated quartz vessels. The diffusion temperature was varied in the range Т = 900-1150°С. The arsenic pressure in the vessel was 1 atm in all experiments. It was determined by the mass of arsenic calculated using the Mendeleev-Clapeyron equation on the assumption that the four-atomic arsenic molecules prevail in the vapor. The condition for production of Fe-compensated high-resistance GaAs iswhere N is the concentration of electrically active acceptor iron atoms and N D is the concentration of uncompensated shallow donors equal to the free electron concentration n. The conditions for diffusion were held so that the concentration of iron atoms on the diffusion layer surface was higher than that of the uncompensated shallow donors in GaAs. As a result of iron diffusion, high-resistance layers with the specific resistance ≈10 5 Ω·cm and thickness from units to 300 μm were formed in the wafers. Simultaneously, 3-5 samples with different n were annealed in the vessel. The thickness d of a high-resistance layer was determined on the transverse cleavage of the GaAs wafer after anodic oxidation and on the angle lap by measuring the breakdown voltage of the metal-se...

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“…For GaAs structures, the effect of self-sustaining of high-conductivity state was previously observed in GaAs structures with deep sites (S diodes) [1,2] and switches with optically triggering based on semi-insulating GaAs [3,4]. In switches with optical triggering this phenomenon is known as the " lock-on" effect: the conducting state surprisingly persists for a long time (more than 100 ns) after the end of the optical pulse [3,4].…”

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The effect of maintaining a high conductivity state in high-voltage GaAs diodes switched-on in the delayed avalanche breakdown mode

A.V.

M.S.

P.B.

2022

Technical Physics Letters

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It is experimentally established that high-voltage GaAs diodes maintain conducting state with low residual voltage after switching to the conducting state in the delayed impact-ionization mode. The duration of the constant current in the reversely-biased structure is determined by the duration of the applied rectangular voltage pulse (up to 100 ns) and significantly exceeds drift extraction and recombination times. The discovered effect of self-supporting conducting state resembles the "lock-on" effect in optically activated GaAs semiconductor switches and S-diodes with deep centers. The effect can be explained by shock ionization in narrow collapsing Gann domains. Keywords: high-voltage GaAs diodes, "lock-on" effect.

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Gallium arsenide avalanche-type S-diode based on a n+-?-?-n structure

Cited by 8 publications

References 1 publication

The effect of base thickness on the reverse volt–ampere characteristic of an S-diode

The effect of base thickness on the reverse volt–ampere characteristic of an S-diode

Diffusion and solubility of electrically active iron atoms in gallium arsenide

The effect of maintaining a high conductivity state in high-voltage GaAs diodes switched-on in the delayed avalanche breakdown mode

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