Gallium-arsenide deep-center laser

Gupta, M.; Pan, Janet L.

doi:10.1007/s00340-009-3618-5

Cited by 2 publications

(28 citation statements)

References 28 publications

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“…In the presence of the resonant cavity, the narrow spectral peak at 1.54 μ m in Figure 17c, Figure 18b, and Figure 19c is found to be TE-polarized [5]. This is demonstrated in the inset in Figure 17c.…”

Section: Laser Actionmentioning

confidence: 89%

“…This implies that shorter wavelength TIR modes (e.g., Figures 1g-h) also show net gain in a single-pass [5] because TIR modes suffer no transmission loss at the sample surface. Gain (and laser action) is then observed over a wide wavelength range [44].…”

Section: Laser Actionmentioning

confidence: 99%

“… a, Energies [ 5 , 6 , 7 ] associated with deep-centers in GaAs. b, The dashed lines indicate energies which lie between the upper-state (near the conduction-band) and lower-state (near midgap) of an optical transition.…”

Section: Photoluminescence and Electroluminescence Studiesmentioning

confidence: 99%

“…In a novel effort towards “thresholdless” lasers, we recently demonstrated [5] that native deep-acceptor complexes in gallium-arsenide (GaAs) exhibited laser action at very low current densities. Moreover, in contrast to conventional semiconductor devices, whose operating wavelengths are determined by the bandgap energy, we showed [6,7] that the room-temperature stimulated-emission from GaAs deep-centers can be tuned very widely from the bandgap (∼900 nm) to half-the-bandgap (1600 nm).…”

Section: Introductionmentioning

confidence: 99%

“…The ongoing quest for “thresholdless” [ 1 ] semiconductor lasers has led to the development of new materials (e.g., quantum wells [ 2 ], wires, and dots [ 3 , 4 ]) and new optical resonators (e.g., microdisks [ 4 ] and photonic bandgap crystals [ 1 ]). In a novel effort towards “thresholdless” lasers, we recently demonstrated [ 5 ] that native deep-acceptor complexes in gallium-arsenide (GaAs) exhibited laser action at very low current densities. Moreover, in contrast to conventional semiconductor devices, whose operating wavelengths are determined by the bandgap energy, we showed [ 6 , 7 ] that the room-temperature stimulated-emission from GaAs deep-centers can be tuned very widely from the bandgap (∼900 nm) to half-the-bandgap (1600 nm).…”

Section: Introductionmentioning

confidence: 99%

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Progress to a Gallium-Arsenide Deep-Center Laser

Pan

2009

Materials

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Although photoluminescence from gallium-arsenide (GaAs) deep-centers was first observed in the 1960s, semiconductor lasers have always utilized conduction-to-valence-band transitions. Here we review recent materials studies leading to the first GaAs deep-center laser. First, we summarize well-known properties: nature of deep-center complexes, Franck-Condon effect, photoluminescence. Second, we describe our recent work: insensitivity of photoluminescence with heating, striking differences between electroluminescence and photoluminescence, correlation between transitions to deep-states and absence of bandgap-emission. Room-temperature stimulated-emission from GaAs deep-centers was observed at low electrical injection, and could be tuned from the bandgap to half-the-bandgap (900–1,600 nm) by changing the electrical injection. The first GaAs deep-center laser was demonstrated with electrical injection, and exhibited a threshold of less than 27 mA/cm2 in continuous-wave mode at room temperature at the important 1.54 μm fiber-optic wavelength. This small injection for laser action was explained by fast depopulation of the lower state of the optical transition (fast capture of free holes onto deep-centers), which maintains the population inversion. The evidence for laser action included: superlinear L-I curve, quasi-Fermi level separations satisfying Bernard-Duraffourg’s criterion, optical gains larger than known significant losses, clamping of the optical-emission from lossy modes unable to reach laser action, pinning of the population distribution during laser action.

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Section: Laser Actionmentioning

confidence: 89%

Section: Laser Actionmentioning

confidence: 99%

Section: Photoluminescence and Electroluminescence Studiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Progress to a Gallium-Arsenide Deep-Center Laser

Pan

2009

Materials

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Temporal Characteristic of M—M Transition Lasers in Strontium Atom Vapour

Gange

Cheng

2008

Chinese Phys. Lett.

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The kinetic process of Sr atom metastable-metastable transition lasers in He-Sr longitudinal pulsed discharge is analysed and a concise self-consistent physical model is developed. The temporal evolutions of discharge parameters, main particle densities, the electron temperature, and the lasing pulses are numerically calculated. The results provided by the model agree well with the experiment, and the temporal behaviour of each laser pulse is explained successfully by the simulation results.

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Gallium-arsenide deep-center laser

Cited by 2 publications

References 28 publications

Progress to a Gallium-Arsenide Deep-Center Laser

Progress to a Gallium-Arsenide Deep-Center Laser

Temporal Characteristic of M—M Transition Lasers in Strontium Atom Vapour

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