Gallium-arsenide deep-level devices for 1.55spl/mu/m fiber-optics

Pan, Janet L.; McManis, J.E.; Osadchy, T.; Grober, L. H.; Woodall, J. M.

doi:10.1109/isdrs.2003.1272108

Cited by 1 publication

(2 citation statements)

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“…Surprisingly, our devices showed tunnel-diode behavior, with the largest [4] ever peak-current density of 16kA/cm 2 and the largest ever negative-conductance (NC) per-area of 1/226Ω-µm 2 at room temperature for a GaAs tunnel diode. The contacts were not annealed.…”

Section: Transport Mechanisms and Tunnel Diodesmentioning

confidence: 76%

“…Consequently, industry has responded with a costly push to develop InP electronics. At room temperature, our measured negativeconductance-per-area of 1/226Ω-µm 2 and peak current density of 16kA/cm 2 are the largest [4] ever in GaAs tunnel diodes. Unfortunately, GaAs has a bandgap whose wavelength (0.85µm) is far too short for 1.5µm fiber-optics.…”

Section: Introductionmentioning

confidence: 75%

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Optical And Transport Properties Of Devices Utilizing Nanoscale Deep-Centers

Pan¹

2005

AIP Conference Proceedings

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We demonstrate how nanoscale deep-centers make possible novel devices for THz applications and 1.5um fiber-optic emitters on GaAs. We report the first GaAs light-emitting-diode (LED) emitting at 1.5υm fiber-optic wavelengths from arsenic-antisite deep-levels. This is an enabling technology for 1.5um fiber-optic components latticematched to GaAs ICs. We demonstrate experimental results for significant internal optical power (24mW), efficiency (0.6 percent), and speed (THz) from GaAs deep-level optical emitters. We demonstrate the first GaAs tunnel diodes utilizing arsenic-antisite deep-levels. At room temperature, our measured peak current density (16kA/cm2) is the largest ever in GaAs tunnel diodes. Our devices also show room-temperature peak-to-valley current ratios as high as 22. We ascertain the transport mechanisms which limit the peak and valley currents. Finally, we present the first fully-analytical multi-band model of the deep-center wave function. (e.g., symmetry and admixture of atomic orbitals). This wave function determines the general optical properties (optical selection-rules and transition strengths) of deep-centers in terms of simple materials parameters (bandgap energy, Kane dipole) and angular momenta quantum numbers. This model is applicable in a wide variety of materials, and is in agreement with experiment.

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Section: Transport Mechanisms and Tunnel Diodesmentioning

confidence: 76%

Section: Introductionmentioning

confidence: 75%