Gallium-arsenide deep-level materials for THz and fiber-optic applications

Pan, Janet L.

doi:10.1016/j.physb.2005.12.137

Physica B: Condensed Matter

2006

DOI: 10.1016/j.physb.2005.12.137

|View full text |Cite

Gallium-arsenide deep-level materials for THz and fiber-optic applications

Janet L. Pan

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2011

2013

Publication Types

Select...

Article2

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

(1 citation statement)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is known that as-grown LTG GaAs contains a large density (10 19 to 10 20 cm 23 ) As-antisite defects (As Ga ) that create an impurity band in the middle of the energy bandgap of GaAs. The optical absorption coefficient for the electron transitions from this band to the conduction band at room temperature is 10 4 cm 21 at 1 mm wavelength and 1.6 × 10 3 cm 21 at 1.55 mm [7].…”

mentioning

confidence: 93%

Terahertz generation by photoconductors made from low-temperature-grown GaAs annealed at moderate temperatures

2011

View full text Add to dashboard Cite

A terahertz time-domain spectroscopy system based on a femtosecond Yb:KGW laser, photoconductive emitters made using a low-temperature-grown (LTG) GaAs layer annealed at different temperatures, and a photoconductive detector made using a Si-doped GaBiAs epitaxial layer, has been demonstrated. Useful spectral bandwidth of the system, that might be used in spectroscopy experiments, was up to 3 THz and its dynamical range exceeded 50 dB when the LTG GaAs emitter annealed at 4208C was used. It has been concluded that the breakdown field of as-grown layers is much larger than that of annealed layers; this process provides rather large optical-to-THz radiation conversion efficiencies for the emitters made from moderately annealed LTG GaAs.Introduction: Optoelectronic terahertz (THz) systems, in which femtosecond laser pulses are used both for the generation and for the detection of THz pulses either by the optical rectification effect or by employing photoconductive components made from semiconductors with subpicosecond electron lifetimes are finding an increasing number of applications in spectroscopy and imaging [1]. Typically, Ti:sapphire laser pulses with a central wavelength around 800 nm and photoconductors manufactured from low-temperature-grown (LTG) GaAs epitaxial layers are used for this purpose. Recently, more compact, efficient, and cost-effective than Ti:sapphire laser solid-state and fibre laser systems that are generating femtosecond pulses at near-infrared wavelengths from 1 to 1.5 mm have been developed [2,3]. GaAs is not sensitive at these wavelengths; therefore alternative semiconductor materials with narrower energy bandgaps have been examined [4]. Ion-implanted InGaAs was used for manufacturing ultrafast photoconductors sensitive at 1.5 mm wavelength [5], whereas optoelectronic THz components activated by a femtosecond 1 mm wavelength laser were manufactured from the GaBiAs alloy [6].In this Letter, we propose the manufacture of optoelectronic THz range components sensitive to near-infrared radiation from as-grown or annealed at moderate ( 4008C) temperatures LTG GaAs layers. It is known that as-grown LTG GaAs contains a large density (10 19 to 10 20 cm 23 ) As-antisite defects (As Ga ) that create an impurity band in the middle of the energy bandgap of GaAs. The optical absorption coefficient for the electron transitions from this band to the conduction band at room temperature is 10 4 cm 21 at 1 mm wavelength and 1.6 × 10 3 cm 21 at 1.55 mm [7].

show abstract

mentioning

confidence: 93%

Terahertz generation by photoconductors made from low-temperature-grown GaAs annealed at moderate temperatures

2011

View full text Add to dashboard Cite

show abstract

Generation and detection of terahertz radiation up to 4.5 THz by low-temperature grown GaAs photoconductive antennas excited at 1560 nm

et al. 2013

View full text Add to dashboard Cite

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Gallium-arsenide deep-level materials for THz and fiber-optic applications

Cited by 2 publications

References 9 publications

Terahertz generation by photoconductors made from low-temperature-grown GaAs annealed at moderate temperatures

Terahertz generation by photoconductors made from low-temperature-grown GaAs annealed at moderate temperatures

Generation and detection of terahertz radiation up to 4.5 THz by low-temperature grown GaAs photoconductive antennas excited at 1560 nm

Contact Info

Product

Resources

About