Gallium arsenide electroabsorption avalanche photodiode waveguide detectors

Abstract

Gallium arsenide electroabsorption avalanche photodiode (EAP) detectors have been fabricated in n - n(+) GaAs waveguides. Since these EAP detectors respond to wavelengths beyond the normal absorption edge of GaAs, due to the Franz-Keldysh effect, they have been used to detect the below band gap radiation from GaAs lasers and the 1.06-mum radiation from Nd:YAG lasers. The measured absorption and responsivity at these wavelengths suggest a number of applications. These EAP devices have been used to detect analog signals with a distortion less than 6%. Methods for utilizing them in time- and frequency-demultiplexing applications are also described.

Ultrahigh-Purity Undoped GaAs Epitaxial Layers Prepared by Liquid Phase Epitaxy

“…Owing to its slow growth rate, this technique can also be used to grow finely tuned, thin epilayers (>0:1 mm), which are used in laser diodes. Therefore, LPE is widely used for the growth of compound semiconductor layer structures for manufacturing optical devices, such as light-emitting diodes, 1) semiconductor lasers, 2) detectors, 3) and external modulators. 4) The successful operation of these devices strongly depends on the quality of the fabricated epitaxial layers.…”