2015
DOI: 10.1541/ieejjia.4.434
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Gallium Arsenide IC Technology for Power Supplies on Chip

Abstract: This paper presents a power IC technology platform based on AlGaAs/InGaAs/AlGaAs pseudomorphic field-effect transistors (pHEMTs) on a GaAs substrate. A quantitative assessment of a foundry-available 11-V GaAs pHEMT process indicates that owing to their superior material properties, the intrinsic figure of merit for pHEMT switching devices exhibits an order of magnitude improvement over state-of-the-art silicon NMOS transistors. The characterization results for GaAs pHEMTs with a breakdown voltage up to 47 V ar… Show more

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