Gallium Cationic Incorporated Compact TiO2 as an Efficient Electron-Transporting Layer for Stable Perovskite Solar Cells

Mali, Sawanta S.; Patil, Jyoti V.; Kim, Hyungjin; Hong, Chang Kook

doi:10.1016/j.matt.2019.04.001

Cited by 38 publications

(20 citation statements)

References 46 publications

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“…The calculated lifetimes extracted from the FLIM images. The TRPL lifetime parameters were extracted by fitting with a biexponential decay function (Figure i)

I (t) = I_{0} + A_{1} \exp (- \frac{t - t_{0}}{τ_{1}}) + A_{2} \exp (\frac{- t - t_{0}}{τ_{2}})

where τ 1 and τ 2 are first and second order decay time, and A 1 and A 2 are the respective weighting fractions of each decay channel. The average recombination lifetimes 〈τ avg 〉 for respective samples were calculated from lifetime values and weight fraction amplitude values (%) using the following equation

〈 τ_{avg} 〉 = \sum_{n} \frac{Σ A_{n} τ_{n}^{2}}{{normalΣ}_{m} A_{m} τ_{m}^{2}}

…”

Section: Photovoltaic Performance Of Mncl2:cspbi2br‐based Ai‐pscs Formentioning

confidence: 99%

Simultaneous Improved Performance and Thermal Stability of Planar Metal Ion Incorporated CsPbI₂Br All‐Inorganic Perovskite Solar Cells Based on MgZnO Nanocrystalline Electron Transporting Layer

Mali

Patil

Hong

2019

Advanced Energy Materials

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employed in order to make stable perovskite phase, which includes incorporation of inorganic cations at A-site and/or B-site with mixed halides. However, still methylammonium (MA) or formamidinium (FA) cations suffered from low thermal stability. [9][10][11] Therefore, allinorganic cesium lead halide (CsPbX 3 ) attracted tremendous attention due to its thermal stability and promising optoelectronicproperties. [12][13][14][15][16][17] Unfortunately, Cs-based all-inorganic perovskites especially CsPbI 3 are suffer from poor stability due to their thermodynamically unstable phase. The photoactive cubic alpha (α)−phase (black phase) simultaneously transforms to the orthorhombic photo inactive delta (δ)−phase (yellow phase), which is thermodynamically stable at room temperature. [12,[18][19][20][21][22][23] Therefore, it is necessary to make stable α-phase using adequate composition and deposition techniques. Several methods have been used to maintain the stable α-CsPbI 3 black phase, which includes controlled grain growth, [24] size controlling to the quantum dots (QDs), [25,26] solvent engineering process, [27] additives [18,[28][29][30] airquenching, [31,32] and metal-ion doping. [33][34][35][36][37][38][39][40][41][42][43][44][45] In case of Mn 2± doped CsPbIBr 2 , Liang et al. used Mn-doped all-inorganic perovskites having CsPb 1−x Mn x I 1+2x Br 2−2x (where x = 0.005) composition for hole transporting materials (HTMs) free (C-PSCs) and demonstrated 7.36% PCE with >300 h stability in ambient condition, which is much higher than pristine CsPbI 2 Br composition. [36] However, the dynamic hot-air process with metal ion doped CsPbI 2 Br makes stable α-phase at ambient condition. [46] Although alternative methods including postair flow, [47] coevaporation, [48] and vacuum flash [49] have been used for deposition of this CsPbX 3 layer. However, the solvent engineering process still yields the best efficiency for CsPbI 2 Br composition. [24] Thus, in the CsPbI 2 Br films, the prototypal allinorganic perovskite, the quality of the film (crystallinity and thickness), dominates the photovoltaic performance. Obtaining >1 µm grain size in the CsPbI 2 Br film by this method is easy but difficult to achieve in vertical direction and air processing The high thermal stability and facile synthesis of CsPbI 2 Br all-inorganic perovskite solar cells (AI-PSCs) have attracted tremendous attention. As far as electron-transporting layers (ETLs) are concerned, low temperature processing and reduced interfacial recombination centers through tunable energy levels determine the feasibility of the perovskite devices. Although the TiO 2 is the most popular ETL used in PSCs, its processing temperature and moderate electron mobility hamper the performance and feasibility. Herein, the highly stable, low-temperature processed MgZnO nanocrystal-based ETLs for dynamic hot-air processed Mn 2+ incorporated CsPbI2Br AI-PSCs are reported. By holding its regular planar "n-i-p" type device architecture, the MgZnO ETL and poly(3-hexylthiophene-2,5diyl) h...

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“…The calculated lifetimes extracted from the FLIM images. The TRPL lifetime parameters were extracted by fitting with a biexponential decay function (Figure i)

I (t) = I_{0} + A_{1} \exp (- \frac{t - t_{0}}{τ_{1}}) + A_{2} \exp (\frac{- t - t_{0}}{τ_{2}})

〈 τ_{avg} 〉 = \sum_{n} \frac{Σ A_{n} τ_{n}^{2}}{{normalΣ}_{m} A_{m} τ_{m}^{2}}

…”

Section: Photovoltaic Performance Of Mncl2:cspbi2br‐based Ai‐pscs Formentioning

confidence: 99%

Simultaneous Improved Performance and Thermal Stability of Planar Metal Ion Incorporated CsPbI₂Br All‐Inorganic Perovskite Solar Cells Based on MgZnO Nanocrystalline Electron Transporting Layer

Mali

Patil

Hong

2019

Advanced Energy Materials

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“…To overcome these issues, surface modification using organic/inorganic/nanocarbon and ligand binding has been considered one of the proven techniques to passivate and modulate the optoelectronic properties of the contact interfaces (TiO 2 /perovskite layers). In this regard, the readers are advised to refer some of the recently published high-quality journal articles pertaining to the current status and developments of surface-modified TiO 2 [5,[66][67][68][69][70][71][72].…”

Section: Chemical Methods To Deposit Tio 2 Films At Low Temperaturesmentioning

confidence: 99%

Current advancements on charge selective contact interfacial layers and electrodes in flexible hybrid perovskite photovoltaics

Saianand

Sonar

Wilson

et al. 2021

Journal of Energy Chemistry

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“…[ 176 ] The Ga 3+ are particularly suitable dopants, as its size is similar to that of Zn 2+ , which could result in smaller lattice deformation even at high dopant concentrations. For instance, Mali et al [ 177 ] synthesized Ga 3+ ‐doped TiO 2 via a facile spin‐coating and investigated the impact of Ga 3+ doping on device performance (Figure 8g). The Ga 3+ can occupy the Ti 4+ by producing positively charged oxygen vacancies due to the balance of the TiO 2 system.…”

Section: Doping Of Semiconductor Oxides Etlsmentioning

confidence: 99%

Doping in Semiconductor Oxides‐Based Electron Transport Materials for Perovskite Solar Cells Application

et al. 2021

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From the perspective of the device structure of perovskite solar cells (PSCs), the electron transport layer is one of the essential components and plays a significant role in suppressing carrier recombination. Furthermore, its decisiveness is related to the quality of perovskite film, the rapid interface carrier extraction, and the bandgap alignment. However, the deficiency of the semiconductor oxides based electron transport materials, especially for most studied TiO2, is that their carrier mobility is one to three orders of magnitude lower than the most commonly used hole transport materials, leading to an imbalanced carrier flux and unpredicted hysteresis. Doping new ions are the most effective ways to improve electron mobility and tune the bandgap, while the fundamental mechanism of doping in the majority of cases are still lacking. Herein, the doping effect on semiconductor oxides is reviewed and emphasized by classifying the doping ions according to the critical factors of lattice optimization, a carrier transporting improvement, and interface modification. This review is the first systematic summary of the ion doping characteristics in oxide electron transport layers of PSCs. Finally, the implementation of doping ions in electron transport materials is briefly discussed for further enhancing the photovoltaic performance of PSCs.

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Gallium Cationic Incorporated Compact TiO2 as an Efficient Electron-Transporting Layer for Stable Perovskite Solar Cells

Cited by 38 publications

References 46 publications

Simultaneous Improved Performance and Thermal Stability of Planar Metal Ion Incorporated CsPbI₂Br All‐Inorganic Perovskite Solar Cells Based on MgZnO Nanocrystalline Electron Transporting Layer

Simultaneous Improved Performance and Thermal Stability of Planar Metal Ion Incorporated CsPbI₂Br All‐Inorganic Perovskite Solar Cells Based on MgZnO Nanocrystalline Electron Transporting Layer

Current advancements on charge selective contact interfacial layers and electrodes in flexible hybrid perovskite photovoltaics

Doping in Semiconductor Oxides‐Based Electron Transport Materials for Perovskite Solar Cells Application

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Gallium Cationic Incorporated Compact TiO2 as an Efficient Electron-Transporting Layer for Stable Perovskite Solar Cells

Cited by 38 publications

References 46 publications

Simultaneous Improved Performance and Thermal Stability of Planar Metal Ion Incorporated CsPbI2Br All‐Inorganic Perovskite Solar Cells Based on MgZnO Nanocrystalline Electron Transporting Layer

Simultaneous Improved Performance and Thermal Stability of Planar Metal Ion Incorporated CsPbI2Br All‐Inorganic Perovskite Solar Cells Based on MgZnO Nanocrystalline Electron Transporting Layer

Current advancements on charge selective contact interfacial layers and electrodes in flexible hybrid perovskite photovoltaics

Doping in Semiconductor Oxides‐Based Electron Transport Materials for Perovskite Solar Cells Application

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Product

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Simultaneous Improved Performance and Thermal Stability of Planar Metal Ion Incorporated CsPbI₂Br All‐Inorganic Perovskite Solar Cells Based on MgZnO Nanocrystalline Electron Transporting Layer

Simultaneous Improved Performance and Thermal Stability of Planar Metal Ion Incorporated CsPbI₂Br All‐Inorganic Perovskite Solar Cells Based on MgZnO Nanocrystalline Electron Transporting Layer