An approach is presented to modify the WF of solution-processed sol-gel derived ZnO over an exceptionally wide range of more than 2.3 eV. This approach relies on the formation of dense and homogeneous self-assembled monolayers based on phosphonic acids with different dipole moments. This allows us to apply ZnO as charge selective bottom electrodes in either regular or inverted solar cell structures, using P3HT:PCBM as the active layer. These devices compete with or even exceed the performance of the reference cell on ITO/PEDOT:PSS. Our finding challenges the current view that bottom electrodes in inverted solar cells need to be electron-blocking for good device performance.Transparent metal oxides (TMOs) are integral parts of today's optoelectronic devices, either as electron conducting electrodes or intrinsically-doped semiconductors. Among these, zinc oxide (ZnO) is becoming increasingly important, as it is composed of earth-abundant elements. Also, a wide range of vapor-and solution based methods is available for ZnO deposition, ranging from chemical or physical vapor deposition (CVD, PVD) for the preparation of epitaxially grown single crystalline ZnO films to sol-gel procedures for low cost solution-based deposition. ZnO is already intensively used as a low-cost, transparent electrode in inorganic devices, [1][2] but more recently also as a charge selective interlayer material in efficient organic solar cells (OSCs) or organic light-emitting diodes (OLEDs). [3][4] However, the moderate work function (WF) of untreated ZnO of about 4.3 eV causes injection barriers to almost all conventional organic semiconductors [5][6][7][8][9] and the WF of such ZnO layers is poorly reproducible due to the physisorption of contaminations. [10] Finally, its poor chemical stability in an acidic environment [11][12][13] makes the application particularly in organic devices challenging. Therefore, for some of the recent organic record solar cells, the WF of the ZnO forming the bottom electrode was