Gallium‐Doped Zinc Oxide/Tungsten‐Doped Indium Oxide Stacks with Enhanced Lateral Transport Capability for Efficient and Low‐Cost Silicon Heterojunction Solar Cells

Abstract

To decrease the series resistance in front Gallium‐doped zinc oxide (GZO) silicon heterojunction (SHJ) solar cells caused by high‐resistivity GZO films, stack films including Tungsten‐doped indium oxide (IWO) films which have better lateral transport properties were used as the front transparent conductive oxide (TCO) to improve charge transport. The crystal structure and, electrical and optical characteristics of GZO/IWO stacks with different thickness ratios were investigated and the current‐voltage performance of SHJ solar cells with front GZO/IWO stacks and rear GZO film were analyzed. The effective transmittance of the stacks was greater 98% in the visible region. When the thickness of GZO/IWO was 50 nm:50 nm, the resistivity reached 8.59×10‐4 Ω·cm, which is a significantly 70% reduction compared with that of a single GZO film. Meanwhile, the power conversion efficiency was improved to 23.8%, effectively reducing the efficiency gap by approximately 0.12% compared to a single IWO transparent electrode. More effective lateral transport lowers the series resistance of SHJ solar cells. By employing stacks with lower indium content in the front TCO of SHJ solar cells, the cost can be reduced without significantly affecting the efficiency, which is important for the large‐scale development of SHJ solar cells.This article is protected by copyright. All rights reserved.