Gallium nitride-based complementary logic integrated circuits

Zheng, Zheyang; Zhang, Li; Song, Wenlei; Feng, Sirui; Han, Xu; Sun, Jiahui; Yang, Song; Chen, Kevin J.; Wei, Jin

doi:10.1038/s41928-021-00611-y

Cited by 174 publications

(72 citation statements)

References 50 publications

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“… 23 , 24 Moreover, Zheng et al reported the monolithic integration of enhancement-mode n-channel and p-channel GaN field-effect transistors to construct a family of elementary GaN CMOS logic gates. 25 These works pave promising routes to monolithically integrate GaN photonics with electronics on a tiny chip.…”

Section: Introductionmentioning

confidence: 99%

Experimental Demonstration and Theoretical Analysis of Simultaneous Emission–Detection Phenomenon

2022

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The demand for on-chip multifunctional optoelectronic systems is increasing in the Internet-of-Things era. Spectral emission–detection overlap endows an InGaN/GaN quantum well diode (QWD) with an intriguing capability to detect and modulate light emitted by itself, which is of great interest when merging electronics and photonics together on a single chip for the development of advanced information systems. When biased and illuminated at approximately the same time, the InGaN/GaN QWD can achieve light emission and detection simultaneously. Herein, we experimentally demonstrate the simultaneous emission–detection phenomenon and analyze the irreversibility of spectral emission–detection overlap according to energy diagram theory, which may answer why the QWD can only detect and modulate higher-energy photons than those emitted by itself.

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Section: Introductionmentioning

confidence: 99%

Experimental Demonstration and Theoretical Analysis of Simultaneous Emission–Detection Phenomenon

2022

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“…[1][2][3][4][5][6][7] There is a golden rule that both epitaxial approaches require single-crystalline substrates for deposition. For instance, III-nitride semiconductors have a wide range of modern applications, [3,[8][9][10][11] representing an extremely important semiconductor family today, for which the present commonly adopted substrates for their epitaxial growth are single-crystalline sapphire, silicon carbide, silicon (Si), and gallium nitride (GaN). [3,9,12,13] In order to explore novel applications in next-generation electronics and optoelectronics, [10,11] it is highly demanded to grow single-crystalline GaN films on non-epitaxial substrates of interest such as polycrystalline diamond substrates, amorphous glass substrates, and fused silica substrates.…”

Section: Introductionmentioning

confidence: 99%

Polarization‐Driven‐Orientation Selective Growth of Single‐Crystalline III‐Nitride Semiconductors on Arbitrary Substrates

Liu

Zhang

et al. 2022

Adv Funct Materials

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III-nitride semiconductor films are usually achieved by epitaxial growth on single-crystalline substrates (sapphire, silicon (Si), and silicon carbide). It is important to grow these films on non-epitaxial substrates of interest such as polycrystalline substrates for exploring novel applications in electronics and optoelectronics. However, single-crystalline III-nitride films with uniform orientation on non-epitaxial substrates have not yet been realized, due to the lack of crystallographic orientation of the substrates. Here, this work proposes a strategy of polarization-driven-orientation selective growth (OSG) and demonstrate that single-crystalline gallium nitride (GaN) can in principle be achieved on any substrates. Taking polycrystalline diamond and amorphoussilicon dioxide/Si substrates as typical examples, the OSG is demonstrated by utilizing a composed buffer layer consisting of graphene and polycrystalline physical vapor deposited (PVD) aluminium nitride (AlN). The polarization of the PVD AlN can effectively tune the strength of interfacial orbital coupling between AlN nuclei and graphene at different rotation angles, as confirmed by atom-scale first-principles calculations, and align the AlN nuclei to form a uniform orientation. This consequently leads to continuous single-crystalline GaN films. The ability to grow single-crystalline III-nitrides onto any desired substrates would create unprecedented opportunities for developing novel electronic and optoelectronic devices.

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“…Due to the superb high-frequency characteristic and highbreakdown voltage, GaN-based high-electron-mobility transistors (HEMTs) have become the most promising candidates for power microwave devices. [1][2][3][4][5][6][7] Conducting current through 2D electron gas (2DEG) localized at the AlGaN/GaN heterojunction interface gives the GaN-based HEMTs a low on-resistance and excellent high-frequency characteristics. To date, further improvement of the high-frequency performance of the devices to meet the requirements of the high-frequency communication field has become the focus of research.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Improved 2D Electron Gas Mobility in InAlN/AlN/InGaN High‐Electron‐Mobility Transistors with GaN Interlayer

Tang

Liu

Mao

et al. 2022

Physica Rapid Research Ltrs

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Herein, the physical mechanism of the GaN interlayer for improving 2D electron gas (2DEG) mobility in the InGaN channel using an intersub‐band scattering model is systematically elucidated. The model takes into account various scattering mechanisms between the first four sub‐bands, in which the wavefunction of each sub‐band is obtained by self‐consistently solving 1D Schrödinger−Poisson equations. The total 2DEG mobility is obtained by averaging the sub‐band mobility by the percentage of electrons in the different sub‐bands. The effect of introducing different thicknesses of the GaN interlayer on the mobility limited by various scattering mechanisms is discussed in detail, especially polar optical phonon scattering and alloy disorder scattering. The calculated results are well supported by the reported experimental data, validating the correctness of the model.

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Gallium nitride-based complementary logic integrated circuits

Cited by 174 publications

References 50 publications

Experimental Demonstration and Theoretical Analysis of Simultaneous Emission–Detection Phenomenon

Experimental Demonstration and Theoretical Analysis of Simultaneous Emission–Detection Phenomenon

Polarization‐Driven‐Orientation Selective Growth of Single‐Crystalline III‐Nitride Semiconductors on Arbitrary Substrates

Analysis of Improved 2D Electron Gas Mobility in InAlN/AlN/InGaN High‐Electron‐Mobility Transistors with GaN Interlayer

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