Gallium nitride (GaN) on sapphire substrates for visible LEDs

Ryou, Jae‐Hyun

doi:10.1533/9780857099303.1.66

Cited by 3 publications

(3 citation statements)

References 164 publications

(158 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…14,15 Unlike other semiconductors including silicon (Si) and gallium arsenide (GaAs), of which device structures are constructed on the same type of single-crystalline substrates, native single-crystalline substrates of gallium nitride (GaN) were not available until very recently. 16 Development of "device-quality" GaN and related materials had been hampered for about 17 years, 17 since the first attempt of the epitaxial growth of GaN, 17,18 until Amano and Akasaki developed a special epitaxial growth technique using a low-temperature buffer layer. 19 This strained heteroepitaxial growth works well only for the growth along the cdirection, that is, to yield a (0001) plane surface of wurtzite structure of GaN.…”

mentioning

confidence: 99%

“…III-N materials and devices have brought tremendous benefits to mankind as energy-efficient and environmentally friendly light sources . The potential of the materials has been recognized in many applications of current- and next-generation electronics and photonics. , Unlike other semiconductors including silicon (Si) and gallium arsenide (GaAs), of which device structures are constructed on the same type of single-crystalline substrates, native single-crystalline substrates of gallium nitride (GaN) were not available until very recently . Development of “device-quality” GaN and related materials had been hampered for about 17 years, since the first attempt of the epitaxial growth of GaN, , until Amano and Akasaki developed a special epitaxial growth technique using a low-temperature buffer layer .…”

mentioning

confidence: 99%

See 1 more Smart Citation

Bendable III-N Visible Light-Emitting Diodes beyond Mechanical Flexibility: Theoretical Study on Quantum Efficiency Improvement and Color Tunability by External Strain

Shervin¹,

Kim

Asadirad³

et al. 2016

ACS Photonics

View full text Add to dashboard Cite

We show that bending of flexible light-emitting diodes based on polar group III–V nitride structures can function as more than mechanically flexible devices through numerical studies. Controlled external bending can improve internal quantum efficiencies and electron-to-photon conversion efficiencies. Moreover, emission wavelength and color can be changed using active polarization control with external bending strains. We show that applying external strain on InGaN/GaN quantum-well (QW) heterostructures can mitigate or enhance the quantum-confined Stark effect. Significant IQE improvement (≥10%) is estimated by introducing external strain with concave-side up bending of flexible heterostructures. We also show significant wavelength shifts in peak emission. Especially, the In0.35Ga0.65N QW can be tuned in the overall visible spectral range by choosing different curvatures and bending modes. We have suggested the concept of a photoelectromechanical device that can emit different colors depending on the applied external strain varying from red to blue, enabling white light generation with the same active region consisting of QWs with a constant indium mole fraction.

show abstract

mentioning

confidence: 99%

mentioning

confidence: 99%

Bendable III-N Visible Light-Emitting Diodes beyond Mechanical Flexibility: Theoretical Study on Quantum Efficiency Improvement and Color Tunability by External Strain

Shervin¹,

Kim

Asadirad³

et al. 2016

ACS Photonics

View full text Add to dashboard Cite

show abstract

“…However, the allowed transition of Ti 3+ has a much faster decay rate; so, faster cool-down times could be enabled for semiconductor sensor circuitry grown on Ti 3+ :Al 2 O 3 substrates and cooled optically to cryogenic temperatures. Sapphire is an excellent substrate for GaN, Al x Ga 1-x N or In x Ga 1-x N, and ZnO epitaxy [21,45,46]; so, if cooling were to be demonstrated with laser diodes, the improved performance of imaging arrays in outer space could be achieved in the near future.…”

Section: Discussionmentioning

confidence: 99%