Gallium Nitride Nanomaterials and Color Centers for Quantum Technologies

Abstract

Gallium nitride (GaN) is an advanced semiconductor primarily known for its current applications in lasers and high-power electronics. With the availability of various growth techniques for both thin films and nanomaterials, which result in high-purity materials, and its exceptional electrical and optical properties, GaN stands in a unique position for potential expansion into other fields, particularly in the realm of quantum technologies. In recent years, there have been notable advancements in GaN quantum dots, nanowires, and more recently color centers, revealing promising optical and spin quantum properties that could pave the way for further developments in the future. This review offers a comprehensive review of recent studies focused on the quantum properties of GaN materials, particularly in terms of single-photon emission and the characteristics of color centers. While GaN is still in the early stages of assessment compared to other emerging quantum materials, we present a perspective on its unexplored potential, which holds the promise of unlocking new opportunities for the advancement of quantum technologies.

Room temperature optical coupling of neodymium ions to photonic crystal L3 cavity in gallium nitride semiconductor

“…The well-developed GaN semiconductor platform allows integration of Ln ions into more complex devices, which holds the promise of unlocking new opportunities for the advancement of quantum technologies. 33) Nevertheless, despite the fact that Ln-doped GaN materials and devices have been studied for more than two decades, 27) only a limited number of studies have been conducted on the optical coupling of Ln ions to GaN nanostructures 34,35) and PhC nanocavities [36][37][38] for the purpose of enhancing the photon emission rate and the photon extraction efficiency.…”