Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

Musumeci, S.; Barba, Vincenzo

doi:10.3390/en16093894

Cited by 28 publications

(9 citation statements)

References 52 publications

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“…Materials 2024, 17, x FOR PEER REVIEW 7 of 14 [5] and references therein. Additional information about the GaN crystal growth is given in review papers by Denis et al [47] and Musemeci et al [48].…”

Section: Ganmentioning

confidence: 99%

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Wide-Bandgap Semiconductors for Radiation Detection: A Review

Capan

2024

Materials

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In this paper, an overview of wide-bandgap (WBG) semiconductors for radiation detection applications is given. The recent advancements in the fabrication of high-quality wafers have enabled remarkable WBG semiconductor device applications. The most common 4H-SiC, GaN, and β-Ga2O3 devices used for radiation detection are described. The 4H-SiC and GaN devices have already achieved exceptional results in the detection of alpha particles and neutrons, thermal neutrons in particular. While β-Ga2O3 devices have not yet reached the same level of technological maturity (compared to 4H-SiC and GaN), their current achievements for X-ray detection indicate great potential and promising prospects for future applications.

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Section: Ganmentioning

confidence: 99%

“…More detailed information about GaN material properties and radiation detection could be found in a comprehensive review paper by Wang et al [ 5 ] and references therein. Additional information about the GaN crystal growth is given in review papers by Denis et al [ 47 ] and Musemeci et al [ 48 ].…”

Section: Ganmentioning

confidence: 99%

Wide-Bandgap Semiconductors for Radiation Detection: A Review

Capan

2024

Materials

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“…Berkeyheiser developed a GaN-based blue light detector [44]. The number of GaN-based devices for optoelectronics, power electronics, and radio frequency (RF) applications is constantly growing [45] which leads to a GaN device market value increase. Radiation detection applications are still far less exploited, compared to power electronics.…”

Section: Ganmentioning

confidence: 99%

4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review

Capan¹

2022

Preprint

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In this review paper, an overview of the application of n-type 4H-SiC Schottky barrier diodes (SBDs) as radiation detectors is given. We have chosen 4H-SiC SBDs among other semiconductor devices such as PiN diodes or metal-oxide-semiconductor (MOS) structures, as significant progress has been achieved in radiation detection applications of SBDs in the last decade. Here, we present the recent advances at all key stages in the application of 4H-SiC SBDs as radiation detectors, namely: SBDs fabrication, electrical characterization of SBDs, and their radiation response. Main achievements are highlighted, and main challenges are discussed.

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“…External current sensors or two-chip solutions (GaN and Si) are also often used and investigated for GaN power electronics [ 47 , 48 , 49 , 50 , 51 , 52 , 53 , 54 , 55 , 56 , 57 ]. State-of-the-art low-voltage GaN motor inverters today still use at least three half-bridge ICs and three sense resistors [ 3 , 58 , 59 ]. In silicon (Si), monolithic three-phase motor drive ICs with integrated current sensing and other functionality have been available for decades, for example, using a lateral insulated gate bipolar transistor (LIGBT) power IC technology [ 60 ].…”

Section: Introductionmentioning

confidence: 99%

Three-Phase Motor Inverter and Current Sensing GaN Power IC

Moench

Reiner

Basler

et al. 2023

Sensors

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A three-phase GaN-based motor inverter IC with three integrated phase current mirror sensors (sense-FETs or sense-HEMTs, 1200:1 ratio), a temperature sensor, and an amplifier is presented and experimentally operated. The three low-side currents are read out by virtual grounding transimpedance amplifiers. A modified summed DC current readout circuit using only one amplifier is also discussed. During continuous 24 V motor operation with space-vector pulse width modulation (SVPWM), the sensor signal is measured and a bidirectional measurement capability is verified. The measured risetime of the sensor signal is 51 ns, indicating around 7 MHz bandwidth (without intentional optimization for high bandwidth). The IC is operated up to 32 V on DC-biased semi-floating substrate to limit negative static back-gating of the high-side transistors to around −7% of the DC-link voltage. Analysis of the capacitive coupling from the three switch-nodes to the substrate is calculated for SVPWM based on capacitance measurement, resulting in four discrete semi-floating substrate voltage levels, which is experimentally verified. Integrated advanced power converter topologies with sensors improve the power density of power electronics applications, such as for low-voltage motor drive.

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Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

Cited by 28 publications

References 52 publications

Wide-Bandgap Semiconductors for Radiation Detection: A Review

Wide-Bandgap Semiconductors for Radiation Detection: A Review

4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review

Three-Phase Motor Inverter and Current Sensing GaN Power IC

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