2021
DOI: 10.1016/j.ceramint.2020.08.289
|View full text |Cite
|
Sign up to set email alerts
|

Gallium oxide films deposition by RF magnetron sputtering; a detailed analysis on the effects of deposition pressure and sputtering power and annealing

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

1
15
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 46 publications
(16 citation statements)
references
References 25 publications
1
15
0
Order By: Relevance
“…Figure a shows the measured bandgap ( E g ) data plotted as a function indium fraction ( x ) in (In x Ga 1– x ) 2 O 3 . The values we measured for pure In 2 O 3 (3.30 eV) and Ga 2 O 3 (4.77 eV) films are in the middle of the ranges that have been reported for In 2 O 3 (2.9–3.6 eV , ) and Ga 2 O 3 (4.5–4.9 eV ). The dotted curve in Figure a shows that the data are nicely fit between the pure compound limits by an expression that considers band bowing during alloying (eq ).…”
supporting
confidence: 62%
See 1 more Smart Citation
“…Figure a shows the measured bandgap ( E g ) data plotted as a function indium fraction ( x ) in (In x Ga 1– x ) 2 O 3 . The values we measured for pure In 2 O 3 (3.30 eV) and Ga 2 O 3 (4.77 eV) films are in the middle of the ranges that have been reported for In 2 O 3 (2.9–3.6 eV , ) and Ga 2 O 3 (4.5–4.9 eV ). The dotted curve in Figure a shows that the data are nicely fit between the pure compound limits by an expression that considers band bowing during alloying (eq ).…”
supporting
confidence: 62%
“…A recent modeling paper by Dive et al suggested that the materials in the In 2 O 3 –Ga 2 O 3 system could possibly be a second potential candidate materials system for CdTe emitter fabrication . Although the component oxides, In 2 O 3 and Ga 2 O 3 , have bandgaps between 2.9 and 3.6 eV and 4.5–4.9 eV and would form negative and large positive CBOs with CdTe, respectively, an alloy of composition (In x Ga 1– x ) 2 O 3 (IGO) should allow the CBO and bandgap to be continuously varied. In fact, recent numerical modeling indicates that a high efficiency emitter for CdTe should be achievable with the InGaO 3 composition with a bandgap of ∼4 eV, but no experimental work has verified the modeled results.…”
mentioning
confidence: 99%
“…where λ, β, and θ are the X-ray wavelength, the FWHM of the most intense peak, and the Bragg diffraction angle, respectively. 56 The following eq 8 was also used to calculate the amount of lattice dislocation density: 57…”
Section: β-Ga 2 O 3 Depositionmentioning
confidence: 99%
“…The integrated pulse energy, time of deposition, pressure in the chamber, plasma gas, target-to-substrate angle, and substrate temperature are all crucial elements in diminishing dopant redistribution and defect creation during high-temperature processing. There are several types of high-quality thin films, such as boron carbon nitride [68], aluminum oxide [75], gallium oxide [76], and others [77], deposited via the magnetron sputtering technique [67]. For readers interested in the history of the thin-film sputter deposition process, we recommend consulting the reference [78].…”
Section: B Sputtering Techniquesmentioning
confidence: 99%