Gallium oxide solar-blind ultraviolet photodetectors: a review

Abstract

This review introduces the developments in β-Ga2O3 materials growth and solar blind UV photodetectors in the last decade, summarizes their advantages and potential for improvement, and puts forward some suggestions for actual application requirements.

Ligand Tailoring Oxide Colloidal Quantum Dots for Silicon‐Integrated Ultraviolet Photodiode

“…A high‐quality GAO CQDs film as photosensitive layer of the device was obtained by oxygen plasma technology with high activation energy and oxygen‐rich environment, which is used to effectively remove organic ligands. Taking graphene (Gr) as the DUV‐transparent conductive window, a Gr/GAO CQDs/c‐Si photodiode with back‐to‐back structure was constructed,3,21–23 which exhibits a high responsivity of 0.165 A/W, twice of the current commercial Si‐based detectors (0.08 A/W), and a fast responsivity of ≈3 ms under 255 nm illumination, achieving the function of DUV imaging 19,24. The results above demonstrate that the stacking wide‐bandgap oxide (GAO) CQDs on c‐Si substrate to form 0D‐3D Si‐integrated photodiode is expected to be realized in the fabrication of low‐cost and high‐performance DUV detector.…”

“…Taking graphene (Gr) as the DUV-transparent conductive window, a Gr/GAO CQDs/c-Si photodiode with back-to-back structure was constructed, [3,[21][22][23] which exhibits a high responsivity of 0.165 A/W, twice of the current commercial Si-based detectors (0.08 A/W), and a fast responsivity of ≈3 ms under 255 nm illumination, achieving the function of DUV imaging. [19,24] The results above demonstrate that the stacking wide-bandgap oxide (GAO) CQDs on c-Si substrate to form 0D-3D Si-integrated photodiode is expected to be realized in the fabrication of low-cost and high-performance DUV detector.Synthesis and structural characterization: Thermal solution method is commonly used to synthesize the CQDs. In the synthesis of GAO CQDs, oleic acid and oleylamine are used as reactive solvents and ligands to provide passivation, and organic gallium acetylacetonate is used as reactive precursor.…”

Structural Engineering of Dispersed Graphene Flakes into ZnO Nanotubes on Discontinues Ultra‐Nanocrystalline Diamond Substrates for High‐Performance Photodetector with Excellent UV Light to Dark Current Ratios

“…Besides, the photocurrent increases with time under the UV on/off cycles of ZnTs/UNCD when compared to other devices (such as ZnTs, GrF-ZnTs, and GrF-ZnTs/UNCD). [26][27][28][29][30][31][32][33] In addition, excellent dispersion of GrF on surface of ZnTs potentially contributes to the high photocurrent because well-etched ZnTs surface on UNCD interlayer also enhance light absorption. Figure 8 shows the photoresponsivity curve of ZnTs, GrF-ZnTs, ZnTs-UNCD, and GrF-ZnTs/UNCD, respectively.…”

III-Nitrides Resonant Cavity Photodetector Devices

“…The most important requirements are high visible rejection, high responsivity at the wavelength of interest, low dark current, linear behavior with the incident optical power and low time response. Numerous different architectures of semiconductor-based detectors have been reported in the literature [ 6 , 7 , 8 , 9 ]. Each of them has a different working mechanism, cost or characteristics that determine their application field.…”

“…Their performance is highly dependent on the semiconductor material used. In this sense, III-nitride semiconductors and/or metallic oxides are the most preferred [ 1 , 9 , 10 ]. This is because these wide-bandgap materials are chemically and thermally more stable; they have a high breakdown field and a high saturation velocity, and the cut-off wavelength can be chosen by using ternary alloys via modifying the chemical composition.…”