Gallium selenide clusters generated via laser desorption ionisation quadrupole ion trap time‐of‐flight mass spectrometry

Abstract

Rationale Gallium selenide thin films important for electronics and phase‐change materials are prepared via pulsed laser deposition (PLD); however, there are no studies concerning the analysis of gallium selenide clusters formed in the gas phase. Laser desorption ionisation (LDI) combined with time‐of‐flight mass spectrometry (TOF‐MS) has great potential to generate charged GamSen clusters, to analyse them and thus to develop new materials. Methods LDI of Ga‐Se mixtures using a pulsed laser (337 nm nitrogen) was used to generate gallium‐selenide clusters. Mass spectra were recorded (in positive and negative ion mode) on a TOF mass spectrometer equipped with a quadrupole ion trap and reflectron mass analyser. Results Ga‐Se mixtures were found to be suitable for laser ablation synthesis (LAS) of gallium selenide clusters, although their composition was strongly dependent on the laser energy. The effect of laser energy on the stoichiometry of the generated clusters was established. In total, over 100 gallium selenide GamSen clusters were generated and identified from Ga‐Se mixtures. LDI of Ga2Se3 crystals showed almost the same clusters up to m/z 1000 with lower intensities, whereas no clusters from Ga2Se3 were observed above m/z 1000. Conclusions A family of over 100 gallium selenide clusters, generated and identified for the first time, shows rich and complex chemistry. Some of the clusters represent new compounds that have the potential to be used in the development of advanced materials.

Mass spectrometric investigation of amorphous Ga-Sb-Se thin films

“…Apart from the aforementioned structures, only a few structures of the binary gallium selenide and antimony selenide clusters have been reported 51,52 . However, there are extensive laser ablation mass spectrometric results showing that in binary systems Ga-Se and Sb-Se over one hundred Ga x Se z and Sb y Se z clusters were detected 53,54 .…”

Quasi-Van der Waals Epitaxial Growth of γ′-GaSe Nanometer-Thick Films on GaAs(111)B Substrates

“…However, obstacles persist in the widespread adoption of GaSe semiconductors, with wafer-scale and nanometer-thick synthesis being major challenges. To date, exfoliation remains the predominant approach for synthesizing GaSe thin films but is plagued by impurities, imprecise film thickness control, and mass production challenges. − Hence, alternative synthesis methods, including chemical vapor deposition, pulsed laser deposition, and molecular beam epitaxy (MBE), ,− are under investigation. MBE presents distinct advantages in growing high-quality GaSe films due to its high-purity environment, precise thickness control, and wafer-scale growth platform.…”