Galvanic displacement of BixTey thin films from sacrificial iron group thin films

Synthesis of PbTe and PbTe/Te Nanostructures by Galvanic Displacement of Cobalt Thin Films

“…Therefore, the decrease of the OCP resulting from increasing in the ratio of [Pb 2+ ]/[HTeO 2 + ] in the electrolyte can be attributed to an increase in the deposited Pb content. The trend is consistent with the previously reported work including galvanically deposited Bi x Te y (e.g., thin films, nanowires, and nanotubes) from a sacrificial iron group (i.e., Ni, Co and Fe), where the deposited Bi content increased up to 40% when the ratio of [Bi 3+ ]/[HTeO 2 + ] increased from 0 to 20 mM [18,20,21].…”

“…1a, OCP significantly varied during the reaction with distinct pattern similar to the previously reported works. [19,21] As shown in the figure, OCP started from a negative potential (i.e., -0.1 to -0.2 V vs. SCE). As the reaction continued, the OCP sharply increased to a positive value, which may be attributed to the coverage of sacrificial Co thin films by deposited PbTe which reduced the anodic current of cobalt.…”

“…A similar result has been reported previously for the galvanic displacement of bismuth telluride with Co thin film. [21] Fig . 5a shows the TEM image with the selected area electron diffraction (SAED) pattern of galvanically deposited PbTe nanostructures deposited in 50 mM Pb 2+ + 10 mM HTeO 2 + + 1 M HNO 3 for 60 min.…”

Electrodeposition and Thermoelectric Characterization of (00L)-Oriented Bi2Te3Thin Films on Silicon with Seed Layer

“…The (015)-oriented thin films comprise a dense arrangement of needle-like crystals (Figure 1a and 1b) which were also observed by other researchers. 18,19 When the deposition condition was further improved, the highest crystallographically textured films of stoichiometric Bi 2 Te 3 were obtained (Figure 1c and 1d). These thin films deposited at the cathode potentials of −0.17 V and −0.20 V show good control of surface micrographs and highest (110) peaks (Figure 2a).…”

Programmable synthesis of shape-, structure-, and composition-modulated one-dimensional heterostructures by galvanic displacement reaction

“…[11][12][13][17][18][19][20][21][22][23][24] A few works have been reported for semiconductors. 8,[25][26][27][28] Moreover, GDR is a unique deposition tool that can facilitate the production of nanoparticles, hollow nanoparticles, nanotubes, or monolayer coatings. Recently, heterostructural nanopeapods have even been demonstrated with passive noble metal inclusion; however to date no effort has integrated multiple GDR constructs in a single nanostructure.…”