Gamma Radiation Dosimetry Using Tellurium Dioxide Thin Film Structures

Abstract

Thin films of Tellurium dioxide (TeO2) were investigated for γ-radiation dosimetry purposes. Samples were fabricated using thin film vapour deposition technique. Thin films of TeO2 were exposed to a 60Co γ-radiation source at a dose rate of 6 Gy/min at room temperature. Absorption spectra for TeO2 films were recorded and the values of the optical band gap and energies of the localized states for as-deposited and γ-irradiated samples were calculated. It was found that the optical band gap values were decreased as the radiation dose was increased. Samples with electrical contacts having a planar structure showed a linear increase in current values with the increase in radiation dose up to a certain dose level. The observed changes in both the optical and the electrical properties suggest that TeO2 thin film may be considered as an effective material for room temperature real time γ-radiation dosimetry.

Effect of gamma radiation on optical and electrical properties of tellurium dioxide thin films

“…They, however, did not report for higher radiation doses. A comparison of the present results with those of Arshak and Korostynska (2002) clearly shows that the rate of increase of the energy width with radiation dose for thicker films is much lower than that for thinner films. Obviously, thin films are more sensitive than thick films.…”

“…Whenever gamma radiation interacts with the thin film, induced defects will be formed and the density of the localized states increases resulting in increase in the energy width of the band tails of localized states. Arshak and Korostynska (2002) reported that the energy width of the band tails of localized states for the TeO 2 thin films of thickness, 50 nm, increased with the increase of radiation dose up to a value of 36 Gy. They, however, did not report for higher radiation doses.…”

Enhanced Gas Sensing Properties of Pt-Loaded TeO2Nanorods

“…[1][2][3][4][5] On the other hand, they have several problems to overcome, such as a lack of sensitivity and very low sensitivity to low gas concentrations at room temperature. The development of highly selective and controllably-sensitized devices remains a challenge.…”

Glasses formation, characterization, and crystal-structure determination in the Bi2O3–Sb2O3–TeO2 system prepared in an air

“…Tellurium dioxide (TeO 2 ) is an important material in both amorphous as well as crystalline form and finds application in active optical devices in particular, a huge hyper-susceptibility, deflectors, modulators, c-ray detectors, and gas sensors because of its high acousto-optic figure of merit, chemical stability, and mechanical durability [1][2][3][4][5][6]. It is also not hygroscopic and has superior physical properties such as high dielectric constant and low melting point (800°C) [7][8][9][10].…”